Film formation apparatus and film formation method and cleaning method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Masakazu Murakami
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Masakazu Murakami
Estimating the term…
The purpose of the invention is to provide a film formation apparatus capable of forming an EL layer with a high purity and a high density, and a cleaning method. The invention is a formation of an EL layer with a high density by heating a substrate 10 by a heating means for heating a substrate, decreasing the pressure of a film formation chamber with a pressure decreasing means (a vacuum pump such as a turbo-molecular pump, a dry pump, or a cryopump) connected to the film formation chamber to 5×10−3 Torr (0.665 Pa) or lower, preferably 1×10−3 Torr (0.133 Pa) or lower, and carrying out film formation by depositing organic compound materials from deposition sources. In the film formation chamber, cleaning of deposition masks is carried out by plasma.
A film formation apparatus for forming a film over a substrate by depositing an organic compound material from a deposition source provided opposite to the substrate, said film formation apparatus comprising:
A film formation apparatus for forming a film over a substrate by depositing an organic compound material from a deposition source provided opposite to the substrate, said film formation apparatus comprising;
A film formation apparatus comprising:
A film formation apparatus comprising:
A film formation apparatus for forming a film over a substrate by depositing an organic compound material from a deposition source provided opposite to the substrate, said film formation apparatus comprising:
A film formation apparatus for forming a film over a substrate by depositing an organic compound material from a deposition source provided opposite to the substrate, said film formation apparatus comprising:
Dependencies are inferred from the claim text.