Superconductor gate semiconductor channel field effect transistor

A transistor structure comprising in combination:

• at least one field effect semiconductor current carrying channel region,
• each said channel region having, positioned between source and drain electrodes,
• a single layer gate member of superconducting oxide superconducting material,
• each said single layer gate member being positioned directly on a gate insulator in contact with said channel region, and,
• each said single layer gate member having a longer dimension transverse to the distance of said channel region between said source and said drain electrodes than the width dimension of said gate member along the distance of said channel between said source and drain electrodes.