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US 6,774,052 B2Granted
Method of making nanotube permeable base transistor
AssigneeNantero, Inc.
InventorsBernhard Vögeli, Thomas Rueckes, Brent M. Segal
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Abstract
A method of making a permeable base transistor (PBT) is disclosed. According to the method, a semiconductor substrate is provided, a base layer is provided on the substrate, and a semiconductor layer is grown over the base layer. The base layer includes metallic nanotubes, which may be grown or deposited on the semiconductor substrate. The nanotube base layer separates emitter and collector layers of semiconductor material.
Claims13
A method of making a permeable base transistor comprising:
- (a) providing a semiconductor substrate;
- (b) providing a base layer on the substrate, wherein the base layer includes metallic nanotubes and wherein the base layer is a base of the permeable base transitor;
- and
- (c) growing a semiconductor layer over the base layer, wherein one of the semiconductor substrate and semiconductor layer is an emitter of the permeable base transistor and the other of the semiconductor substrate and semiconductor layer is a collector of the permeable base transistor.
1 more element
Dependencies are inferred from the claim text.