Barrier coatings produced by atmospheric glow discharge

A method for manufacturing a coated substrate by a process of vapor deposition and concuzrent glow-discharge plasma treatment at substantially atmospheric pressure, comprising the following steps:

• providing a first electrode and a second electrode separated by a dielectric material and facing a process space:
• applying a voltage across the electrodes;
• diffusing a plasma gas through a porous material into the process space at substantially atmospheric pressure;
• mixing a vapor precursor with the plasma gas in the process space;
• and
• depositing the vaporized coating material over said substrate.

A method for manufacturing a coated substrate by a process of vapor deposition and concurrent glow-discharge plasma treatment at substantially atmospheric pressure, comprising the following steps:

• providing a first electrode and a second electrode of opposite polarities separated by a dielectric material and facing a process space:
• applying a voltage across the electrodes,
• mixing a vaporized precursor with a plasma gas;
• diffusing the vaporized precursor and plasma gas into the process space at substantially atmospheric pressure;
• and
• depositing the vaporized precursor over said substrate;
• wherein said first and second electrodes are positioned on a same side of said process space.

A method for manufacturing a coated substrate by a process of vapor deposition and concurrent glow-discharge plasma treatment at substantially atmospheric pressure, comprising the following steps:

• providing a first electrode and a second electrode of opposite polarities separated by a dielectric material and facing a process space:
• applying a voltage across the electrodes;
• diffusing a plasma gas into the process space at substantially atmospheric pressure;
• mixing a vapor precursor with the plasma gas in the process space;
• and
• depositing the vaporized coating material over said substrate;
• wherein said first and second electrodes are positioned on a same side of said process space.