pH buffered compositions useful for cleaning residue from semiconductor substrates
AssigneeAdvanced Technology Materials, Inc.
InventorsMa. Fatima Seijo, William A. Wojtczak, David Bernhard, Thomas H. Baum, David Minsek
Life of this patent
Estimating the term…
Abstract
A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.
Claims14
A semi-aqueous cleaning formulation for semiconductor devices, comprising:
- lactic acid, ammonium lactate, water, 1-cyclohexyl-2-pyrrolidinone and N,N-dimethylacetamide and ammonium fluoride.
A semi-aqueous cleaning formulation for semiconductor devices comprising:
- Component Percent weight by volume formic acid 26.2;
- 1-(2-aminoethyl)piperazine (AEP) 37.0;
- water 32.8;
- and iminodiacetic acid 3.5 ammonium fluoride 0.5.
A semi-aqueous cleaning formulation for semiconductor devices comprising:
- Component Percent weight by volume formic acid 28.7;
- 1-(2-aminoethyl)piperazine (AEP) 37.0;
- water 33.8;
- and ammonium fluoride 0.5.
A semi-aqueous cleaning formulation for semiconductor devices comprising:
- Component Percent weight by volume formic acid 26.4;
- 1-(2-aminoethyl)piperazine (AEP) 37.6;
- water 32.5;
- and iminodiacetic acid 3.5.
The semi-aqueous cleaning formulation for semiconductor devices, wherein said formulation comprises:
- Component Percent weight by volume formic acid 31.0;
- 1-(2-aminoethyl)piperazine (AEP) 36.1;
- water 32.9.
A method for removing particles from a semiconductor wafer surface, said method comprising contacting the wafer surface with a semi-aqueous cleaning formulation for a time sufficient to effect the removal of at least a portion of the particles from the wafer surface, said cleaning formulation comprising lactic acid, ammonium lactate, water, 1-cyclohexyl-2-pyrrolidinone and N,N-dimethylacetamide and ammonium fluoride.
A method of removing particles from a semiconductor substrate comprising:
- forming an insulation film on a semiconductor substrate;
- dry-etching the insulation film into a prescribed pattern, thereby producing particles comprising at least one resultant product from the insulation film on the semiconductor substrate;
- and cleaning the resultant product with a semi-aqueous cleaning formulation comprising lactic acid, ammonium lactate, water, 1-cyclohexyl-2-pyrrolidinone and N,N-dimethylacetamide and ammonium fluoride.
A method of removing particles from a semiconductor substrate comprising:
- forming a conductive line pattern from a metal material or a semiconducting material on a semiconductor substrate;
- forming an insulation film on the conductive line pattern, forming a via hole in the insulation film by dry etching, thereby producing particles comprising at least one resultant product from the insulation film or the metal material on the semiconductor substrate;
- and cleaning the resultant product with a semi-aqueous cleaning formulation comprising lactic acid, ammonium lactate, water, 1-cyclohexyl-2-pyrrolidinone and N,N-dimethylacetamide and ammonium fluoride.
A semi-aqueous cleaning formulation for semiconductor devices comprising formic acid, 1-(2-aminoethyl)piperazine (AEP), water and iminodiacetic acid.
A semi-aqueous cleaning formulation for semiconductor devices comprising formic acid, 1-(2-aminoethyl)piperazine (AEP), water and ammonium fluoride.
A method for removing particles from a semiconductor wafer surface, said method comprising contacting the wafer surface with a semi-aqueous cleaning formulation for a time sufficient to effect the removal of at least a portion of the particles from the wafer surface, said cleaning formulation comprising formic acid, 1-(2-aminoethyl)piperazine (AEP) and water.
A method of removing particles from a semiconductor substrate comprising:
- forming an insulation film on a semiconductor substrate;
- dry-etching the insulation film into a prescribed pattern, thereby producing particles comprising at least one resultant product from the insulation film on the semiconductor substrate;
- and cleaning the resultant product with a semi-aqueous cleaning formulation comprising formic acid, 1-(2-aminoethyl)piperazine (AEP) and water.
A method of removing particles from a semiconductor substrate comprising:
- forming a conductive line pattern from a metal material or a semiconducting material on a semiconductor substrate;
- forming an insulation film on the conductive line pattern, forming a via hole in the insulation film by dry etching, thereby producing particles comprising at least one resultant product from the insulation film or the metal material on the semiconductor substrate;
- and cleaning the resultant product with a semi-aqueous cleaning formulation comprising formic acid, 1-(2-aminoethyl)piperazine (AEP) and water.
Dependencies are inferred from the claim text.