Refreshing memory cells of a phase change material memory device
AssigneeIntel Corporation
InventorsWard D. Parkinson, Tyler A. Lowrey
Life of this patent
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Abstract
Briefly, in accordance with an embodiment of the invention, an apparatus and method to provide refreshing of a memory cell of a phase change memory device is provided. The method includes determining whether a storage level of a phase change memory cell is within a predetermined margin from a resistance threshold. In response to the determination, the cell is selectively written. The apparatus includes a circuit to: determine whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold level; and in response to the determination, selectively write to the cell.
Claims54
A method comprising:
- determining whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold level;
- and
- in response to the determination, selectively writing to the cell.
A method comprising:
- programming a phase change memory cell to indicate a memory state;
- and
- selectively refreshing the memory cell in response to the detection that a storage level of the memory cell is within a predetermined margin from a resistance threshold level.
A method comprising:
- in response to a read operation from a phase change cell, testing the cell to determine whether a storage level of the phase change memory cell is within a predefined margin from a resistance threshold level.
A memory device comprising:
- a phase change memory cell;
- and
- a circuit to:
- determine whether a storage level of the phase change memory cell is within a predefined margin from a resistance threshold level;
- and
- in response to the determination, selectively write to the cell.
A memory device comprising:
- a phase change memory cell;
- and
- a circuit to program the memory cell to exhibit a resistance to indicate a memory state and selectively refresh the memory cell in response to determination of whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold.
A memory device comprising:
- a phase change memory cell;
- and
- a circuit to in response to a read operation from a phase change cell, test the cell to determine whether a storage level of the phase change memory cell is within a predefined margin from a resistance threshold.
A computer system comprising:
- a processor;
- a phase change memory cell;
- and
- a circuit to:
- determine whether a storage level of the phase change memory cell is within a predefined margin from a resistance threshold, and
- in response to the determination, selectively write to the cell.
A computer system comprising:
- a processor;
- a phase change memory cell;
- and
- a circuit to program the memory cell to exhibit a resistance to indicate a memory state and selectively refresh the memory cell in response to whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold.
A computer system comprising;
- a processor;
- a phase change memory cell;
- and
- a circuit to in response to a read operation from a phase change cell, test the cell to determine whether a storage level of the phase change memory cell is within a predefined margin from a resistance threshold.
A method comprising:
- reading all cells of a phase change memory device;
- and
- for each read memory cell, determining whether a storage level of the cell is within a predefined margin from a resistance threshold and in response to the determination selectively writing to the cell.
A method comprising:
- resetting cells of a phase change memory device;
- for each cell reset, determining a reset current level that provides a sufficient margin for the cell;
- and
- setting a minimum current to be used for the resetting based on the determination.
A method comprising:
- setting cells of a phase change memory device;
- for each cell, determining a sweep fall time that provides a sufficient margin for the cell;
- and
- establishing a minimum sweep fall time for the cells based on the determination.
Dependencies are inferred from the claim text.