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US 6,768,324 B1Granted
Semiconductor device tester which measures information related to a structure of a sample in a depth direction
AssigneeFab Solutions, Inc.
InventorsKeizo Yamada, Tohru Tsujide, Yousuke Itagaki, Takeo Ushiki
Life of this patent
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Abstract
Current produced in a sample 5 by irradiating the sample with parallel electron beam 2 is measured by an ammeter 9. The measurement is repeated while changing acceleration voltage of electron beam 2. An information related to a structure of the sample 5 in a depth direction thereof is obtained by a data processor 10, on the basis or a difference in transmittivity of electron beam 2 into the sample 5 due to the difference of acceleration voltage.
Claims35
A semiconductor device tester comprising
- electron beam irradiation means for irradiating a semiconductor device as a sample under test with an electron beam while scanning the semiconductor device;
- a current measuring means for measuring current flowing through the semiconductor resulting from irradiation by the electron beam;
- and
- data processing means for processing measured data from said current measuring means,
- wherein said electron beam irradiation means includes collimator means for collimating the electron beam to a parallel beam and means for changing an acceleration voltage of the electron beam and wherein said data processing means includes means for obtaining an information related to a structure of the sample in a depth direction on the basis of changes of the measured current of said current measuring means caused by a penetration depth of the electron beam for the sample when the latter is scanned with different acceleration voltages.
2 more elements
Dependencies are inferred from the claim text.