White light emitting device based on UV LED and phosphor blend

A lighting apparatus comprising:

• a semiconductor light source emitting radiation having a wavelength in the range of about 430 nm;
• a phosphor blend radiationally coupled to said semiconductor light source, said phosphor blend including a first phosphor comprising (Sr,Ba,Ca,Mg)5(PO4)3Cl:Eu2+ (SECA) and a second phosphor comprising (Tb1-x-yAxREy)3DzO12 (TAG), where A is a member selected from the group consisting of Y, La, Gd, and Sm;
• RE is a member selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu;
• D is a member selected from the group consisting of Al, Ga, and In;
• x is in the range from 0 to about 0.5, y is in the range from about 0 to about 0.2, and z is in the range from about 4 to about 5;
• wherein the phosphor blend is capable of absorbing the radiation emitted by the semiconductor light source and converting the radiation into white light.

A method for forming a lighting apparatus, the method comprising the steps of:

• providing a near TV LED capable of emitting radiation having a wavelength of about 38-420 nm;
• radiationally coupling a phosphor blend to the LED, the phosphor blend including a first phosphor selected from the group consisting of (Sr,Ba,Ca,Mg)5(PO4)3Cl:Eu2+ (SECA) and BaMg2Al16O27:Eu2+ with a second phosphor having the formula (Tb1-x-yAxREy)3DzO12 (TAG:Ce), where A is a member selected from the group consisting of Y, La, Gd, and Sm;
• RE is a member selected from the group consisting of Ce, Pr, Nd, Srn, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu;
• D is a member selected from the group consisting of Al, Ga, and In;
• x is in the range from 0 to about 0.5, y is in the range from about 0 to about 0.2, and z is in the range from about 4 to about 5;
• wherein the phosphor is capable of absorbing the radiation emitted by the semiconductor light source and converting the radiation into white light having the coordinates x=0.340-0.360 and y=0.340-0.360 on the CIE chromaticity diagram.