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US 6,762,448 B1Granted
FinFET device with multiple fin structures
AssigneeAdvanced Micro Devices, Inc.
InventorsMing-Ren Lin, Haihong Wang, Bin Yu
Life of this patent
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Abstract
A semiconductor device includes a group of fin structures. The group of fin structures includes a conductive material and is formed by growing the conductive material in an opening of an oxide layer. The semiconductor device further includes a source region formed at one end of the group of fin structures, a drain region formed at an opposite end of the group of fin structures, and at least one gate.
Claims9
A semiconductor device, comprising:
- a first fin structure comprising a dielectric material and including a first side surface and a second side surface;
- a second fin structure comprising a single-crystal silicon material and being formed adjacent to the first side surface of the first fin structure;
- a third fin structure comprising the single-crystal silicon material and being formed adjacent to the second side surface of the first fin structure;
- a source region formed at one end of the first fin structure, the second fin structure, and the third fin structure;
- a drain region formed at an opposite end of the first fin structure, the second fin structure, and the third fin structure;
- and
- at least one gate.
4 more elements
A semiconductor device comprising:
- a first fin structure comprising a single-crystal silicon material;
- a second fin structure comprising the single-crystal silicon material;
- and
- a third fin structure located between the first fin structure and the second fin structure and comprising a dielectric material, the third fin structure causing stress to be induced in the single-crystal silicon material of the first fin structure and the second fin structure.
1 more element
Dependencies are inferred from the claim text.