Method and system for detecting metal contamination on a semiconductor wafer

A method for increasing degradation of a dielectric material resulting from metal contamination, comprising:

• generating electrical stress in the dielectric material, wherein the dielectric material is disposed upon a semiconductor substrate;
• heating the semiconductor substrate subsequent to generating the electrical stress in the dielectric material;
• subsequent to said heating, measuring a tunneling voltage of the dielectric material;
• and
• determining a characteristic of the metal contamination in the dielectric material, as a function of the measured tunneling voltage.

A method for determining a characteristic of metal contamination in a dielectric material disposed upon a semiconductor substrate, comprising:

• annealing the semiconductor substrate prior to depositing a charge on an upper surface of the dielectric material, wherein annealing the semiconductor substrate is effective to drive the metal contamination into the dielectric material;
• depositing the charge upon the upper surface of the dielectric material;
• annealing the semiconductor substrate subsequent to depositing the charge on the upper surface of the dielectric material;
• subsequent to said annealing subsequent to said depositing, measuring a tunneling voltage of the dielectric material;
• and
• determining a characteristic of the metal contamination in the dielectric material as a function of the measured tunneling voltage.

A method for detecting metal contamination in a dielectric material disposed upon a semiconductor substrate, comprising:

• annealing the semiconductor substrate, wherein annealing the semiconductor substrate is effective to drive the metal contamination into the dielectric material;
• measuring an electrical property of the dielectric material;
• determining a characteristic of the metal contamination in the dielectric material, wherein the characteristic is a function of the measured electrical property;
• and
• determining a presence of particulate contamination on the dielectric material, wherein the presence of particulate contamination is a function of the measured electrical property.