Luminescent display device of active matrix drive type and fabrication method therefor
AssigneeSharp Kabushiki Kaisha
InventorsYoshimasa Fujita, Kazuo Ban
Life of this patent
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Abstract
A luminescent display device of active matrix drive type comprises: a substrate; a switching thin film transistor, a current control thin film transistor, a capacitor, a signal line, a scanning line and a common line which are provided on the substrate; an electroluminescent device provided on the substrate and comprising a pixel electrode connected to the common line via the current control thin film transistor, an electroluminescent layer having at least one light emitting layer, and a counter electrode; and a light-shielding layer for preventing light emitted from the electroluminescent device from reaching the switching thin film transistor and the current control thin film transistor.
Claims23
A luminescent display device of active matrix drive type comprising:
- a substrate;
- a switching thin film transistor, a current control thin film transistor, a capacitor, a signal line, a scanning line and a common line which are provided on the substrate;
- an electroluminescent device provided on the substrate and comprising a pixel electrode connected to the common line via the current control thin film transistor, an electroluminescent layer having at least one light emitting layer, and a counter electrode;
- a light-shielding layer for preventing light emitted from the electroluminescent device from reaching the switching and the current control thin film transistors;
- and
- wherein the light-shielding layer is provided as an insulating film under the pixel electrode and above the switching and current control thin film transistors, and optionally above peripheral regions of the switching and current control thin film transistors.
A luminescent display device of active matrix drive type comprising:
- a substrate;
- a switching thin film transistor, a current control thin film transistor, a capacitor, a signal line, a scanning line and a common line which are supported by at least the substrate;
- an electroluminescent device supported by at least the substrate and comprising a pixel electrode connected to the common line via the current control thin film transistor, an electroluminescent layer having at least one light emitting layer, and a counter electrode;
- a light-shielding layer for preventing light emitted from the electroluminescent device from reaching the switching and the current control thin film transistors;
- wherein the light-shielding layer comprises a gate insulating film of the switching and the current control thin film transistors.
A luminescent display device of active matrix drive type comprising:
- a substrate;
- at least one transistor supported by the substrate;
- an electroluminescent device supported by at least the substrate and comprising a pixel electrode, an electroluminescent layer having at least one light emitting layer, and a counter electrode;
- an insulating light-shielding layer for blocking at least some light emitted from the electroluminescent device from reaching the transistor;
- and
- wherein the pixel electrode and counter electrode of the electroluminescent element are both located over the insulating light-shielding layer thereby covering at least part of the insulating light-shielding layer so that the light-shielding layer is located between the substrate and the electrodes of the electroluminescent element.
A luminescent display device of active matrix drive type comprising:
- a substrate;
- at least one transistor supported by the substrate;
- an electroluminescent device supported by at least the substrate and comprising a pixel electrode, an electroluminescent layer having at least one light emitting layer, and a counter electrode;
- a light-shielding layer for blocking at least some light emitted from the electroluminescent device from reaching the transistor, wherein the light-shielding layer is at least partially located between the pixel electrode and counter electrode of the electroluminescent element and wherein the light-shielding layer contacts each of the pixel electrode and counter electrode of the electroluminescent element.
A luminescent display device of active matrix drive type comprising:
- a substrate
- a switching thin film transistor, a current control thin film transistor, a capacitor, a signal line, a scanning line and a common line which are provided on the substrate;
- an electroluminescent device by at least the substrate and comprising a pixel electrode connected to the common line via the current control thin film transistor, an electroluminescent layer having at least one light emitting layer, and a counter electrode;
- a light-shielding layer for preventing light emitted from the electroluminescent device from reaching the switching and the current control thin film transistors;
- wherein the switching and current control transistors comprise active layers formed directly on the substrate, and wherein the light-shielding layer is formed so as to cover the active layers of said transistors including sidewalls of the active layers which meet and contact the substrate;
- and
- wherein the light-shielding layer comprises a gate insulating film which is in contact with a gate of at least one of the transistors.
A luminescent display device of active matrix drive type comprising:
- a substrate;
- a switching thin film transistor, a current control thin film transistor, a capacitor, a signal line, a scanning line and a common line which are provided on the substrate;
- an electroluminescent device supported by at least the substrate and comprising a pixel electrode connected to the common line via the current control thin film transistor, an electroluminescent layer having at least one light emitting layer, and a counter electrode;
- a light-shielding layer for preventing light emitted from the electroluminescent device from reaching the switching and the current control thin film transistors;
- wherein the switching and current control transistors comprise active layers formed directly on the substrate, and wherein the light-shielding layer is formed so as to cover the active layers of said transistors including sidewalls of the active layers which meet and contact the substrate;
- and
- wherein the light-shielding layer comprises an interlayer insulating film which is located over and contacting at least part of a gate insulating film, and wherein the light-shielding interlayer insulating film is located below and contacting at least part of the pixel electrode of the electroluminescent element.
A luminescent display device of active matrix drive type comprising:
- a substrate
- a switching thin film transistor, a current control thin film transistor, a capacitor, a signal line, a scanning line and a common line which are provided on the substrate;
- an electroluminescent device supported by at least the substrate and comprising a pixel electrode connected to the common line via the current control thin film transistor, an electroluminescent layer having at least one light emitting layer, and a counter electrode;
- a light-shielding layer for preventing light emitted from the electroluminescent device from reaching the switching and the current control thin film transistors;
- wherein the switching and current control transistors comprise active layers formed directly on the substrate, and wherein the light-shielding layer is formed so as to cover the active layers of said transistors including sidewalls of the active layers which meet and contact the substrate;
- and
- wherein the light-shielding layer directly contacts the active layers of the transistors including sidewalls thereof.
Dependencies are inferred from the claim text.