Nanolayer thick film processing system and method
AssigneeTegal Corporation
InventorsTue Nguyen, Tai Dung Nguyen
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Abstract
A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.
Claims20
A process to deposit a thin film on a device by chemical vapor deposition, comprising:
- evacuating a chamber of gases;
- (a) exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form a layer having a thickness of more than a monolayer;
- (b) evacuating the chamber of gases;
- (c) exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the layer deposited by the first reactant is treated;
- and
- (d) repeating steps (a)-(c) until the thin film comprising a plurality of layers is deposited.
A process to deposit a thin film by chemical vapor deposition, comprising:
- (a) pre-cleaning a surface of a device;
- (b) evacuating a chamber of gases;
- (c) stabilizing precursor flow and pressure;
- (d) exposing the device to a gaseous first reactant, wherein the first reactant deposits on the device to form a layer having a thickness of more than a monolayer;
- (e) purging the chamber;
- (f) evacuating the chamber of gases;
- (g) striking the plasma;
- (h) performing a plasma treatment for the deposition;
- (i) exposing the device, coated with the first reactant, to a gaseous second reactant under the plasma treatment, the layer deposited by the first reactant is treated;
- and
- (j) repeating steps (c)-(i) until the thin film comprising a plurality of layers is deposited.
An apparatus to perform nano-layer deposition (NLD), comprising:
- a high density inductive coupled plasma generator to generate plasma;
- and
- a process chamber housing the plasma generator, wherein the chamber exposes a device to a gaseous first reactant, wherein the first reactant deposits on the device to form a layer having a thickness of more than a monolayer and, after purging, exposes the device, coated with the first reactant, to a gaseous second reactant under plasma, the layer deposited by the first reactant is treated.
A process to deposit a thin film on a device by chemical vapor deposition, comprising:
- evacuating a chamber of gases;
- (a) exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form a layer;
- (b) evacuating the chamber of gases;
- (c) exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment,
- wherein the plasma is generated with a solid state RF plasma source having a helical ribbon electrode,
- wherein the layer deposited by the first reactant is treated;
- and
- (d) repeating steps (a)-(c) until the thin film comprising a plurality of layers is deposited.
An apparatus to perform nano-layer deposition (NLD), comprising:
- a high density inductive coupled plasma generator to generate plasma, the plasma generator comprising a solid state RF plasma source with a helical ribbon electrode;
- and
- a process chamber housing the plasma generator, wherein the chamber exposes a device to a gaseous first reactant, wherein the first reactant deposits on the device to form a layer and, after purging, exposes the device, coated with the first reactant, to a gaseous second reactant under plasma, the layer deposited by the first reactant is treated.
Dependencies are inferred from the claim text.