Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen;
• and
• a layer comprising a silver-based material.

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen;
• and
• a layer comprising a gold-based material.

An integrated circuit comprising

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen;
• and
• a layer comprising a silver- or gold-based material, with the layer comprising tungsten, silicon, and nitrogen between the layer comprising a silver- or gold-based material and the insulative layer.

An integrated circuit comprising

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen, wherein the layer comprising tungsten, silicon, and nitrogen comprises a graded composition of tungsten silicide;
• and
• a layer comprising a silver- or gold-based material.

An integrated circuit comprising

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen, wherein the layer comprising tungsten, silicon, and nitrogen comprises a graded composition of WSix, with x varying from 2.0 to 2.5;
• and
• a layer comprising a silver- or gold-based material.

An integrated circuit comprising

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen, wherein the layer comprising tungsten, silicon, and nitrogen comprises a graded composition of WSix, with x varying from 2.0 to 2.5, wherein the layer comprising tungsten, silicon, and nitride comprises a layer of tungsten silicide having interstitial sites stuffed with nitrogen atoms;
• and
• a layer comprising a silver- or gold-based material.

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen;
• and
• a layer comprising a silver-based material, with the layer comprising tungsten, silicon, and nitrgen between the layer comprising a silver-based material and the insulative layer.

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen, wherein the layer comprising tungsten, silicon, and nitrogen comprises a graded composition of tungsten silicide;
• and
• a layer comprising a silver-based material.

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen, wherein the layer comprising tungsten, silicon, and nitrogen comprises a graded composition of WSix, with x varying from 2.0 to 2.5;
• and
• a layer comprising a silver-based material.

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen, wherein the layer comprising tungsten, silicon, and nitrogen comprises a graded composition of WSix, with x varying from 2.0 to 2.5, wherein the layer comprising tungsten, silicon, and nitride comprises a layer of tungsten silicide having interstitial sites stuffed with nitrogen atoms;
• and
• a layer comprising a silver-based material.

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen;
• and
• a layer comprising a gold-based material, with the layer comprising tungsten, silicon, and nitrogen between the layer comprising a gold-based material and the insulative layer.

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen, wherein the layer comprising tungsten, silicon, and nitrogen comprises a graded composition of tungsten silicide;
• and
• a layer comprising a gold-based material.

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen, wherein the layer comprising tungsten, silicon, and nitrogen comprises a graded composition of WSix, with x varying from 2.0 to 2.5;
• and
• a layer comprising a gold-based material.

An integrated circuit comprising:

• a layer including one or more transistors;
• an insulative layer overlying the layer and having one or more conductive structures, with each conductive structure electrically coupled to one or more of the transistors and comprising:
• a layer comprising tungsten, silicon, and nitrogen, wherein the layer comprising tungsten, silicon, and nitrogen comprises a graded composition of WSix, with x varying from 2.0 to 2.5, wherein the layer comprising tungsten, silicon, and nitride comprises a layer of tungsten silicide having interstitial sites stuffed with nitrogen atoms;
• and
• a layer comprising a gold-based material.