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AssigneeHitachi, Ltd.
InventorsToshio Masuda, Tatehito Usui, Mitsuru Suehiro, Hiroshi Kanekiyo, Hideyuki Yamamoto, Kazue Takahashi, Hiromichi Enami
Estimating the term…
The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter. Said plasma processing apparatus ensures stable and high precision measurement of the state of the surface of sample and plasma for a long time.
A plasma processing apparatus comprising:
A plasma processing apparatus comprising a sample bench located in a vacuum chamber;
A plasma processing apparatus comprising a sample bench located in a vacuum chamber, and a conductive plate member coupled to a power source and mounted opposed to the sample placed on the sample bench for radiating electromagnetic waves into the vacuum chamber and in which a gas is supplied into the vacuum chamber to generate a plasma and to process the sample by the plasma, the plasma processing apparatus further comprising:
A plasma processing apparatus, comprising a sample bench located in a vacuum chamber, an antenna disposed opposed to a the sample placed on the sample bench, at least one through hole formed in a portion of the antenna and having an opening at a position opposed to the sample on the side of the antenna facing the plasma generated in the vacuum chamber, the at least one through hole having a depth-to-diameter ratio ranging from 5 to 100, an optical transmitter mounted to the antenna and disposed so as to be substantially in contact with a back of the at least one through hole of the antenna which is opposite to the opening of the a least one through hole provided on the side of the antenna facing the generated plasma, means for measuring a light from the sample passing through the at least one through hole by way of the optical transmitter, thereby detecting optical information showing a surface state of the sample, and means for judging the state of generation of obstacles in the processing chamber based on fluctuation of the optical information.
Dependencies are inferred from the claim text.