Electron beam processing

A method of beam processing multiple sites on a work piece in a vacuum chamber, comprising:

• directing a beam-activated etchant gas toward a site including a material to be etched;
• and
• directing a beam toward the material to etch the material in the presence of the beam activated gas;
• directing a protective-layer-forming gas toward the site to form a protective layer at the site to protect the site from spontaneous etching by the beam-activated gas during further processing of the work piece.

A method of modifying an integrated circuit, comprising:

• removing insulating material to expose a conductive layer;
• removing a portion of the conductive layer to expose a metallic conductor;
• directing an electron-beam activated gas toward the metallic conductor;
• and
• directing an electron beam toward the metallic conductor to activate the electron-beam activated gas to etch the conductor or to deposit a material onto the conductor.

A system for repairing mask defects, comprising:

• a source of electrons;
• an electron beam optical column for focusing electrons from the electron source onto a lithography mask;
• a source of a mask repair gas;
• a gas delivery system for delivering the mask repair gas to the mask in the vicinity of a defective area;
• a defect identification means for locating the position of a defective area on the photolithography mask;
• a movable stage for supporting the mask and positioning it under the electron beam;
• and
• a controller programmed to scan the electron beam within the defective area to cause the mask repair gas to react in the presence of the electron beam to repair the defect.