Semiconductor devices and methods
AssigneesThe Board of Trustees of the University of Illinois, Board of Regents, The University of Texas System
InventorsNick Holonyak, Jr., Russell Dupuis
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Abstract
A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device; and providing a layer of quantum dots disposed in one of the adjacent layers, and spaced from the quantum well, whereby carriers can tunnel in either direction between the quantum well and the quantum dots.
Claims39
A method of forming a semiconductor device, comprising the steps of:
- providing a plurality of semiconductor layers;
- providing a means for coupling signals to and/or from layers of said device;
- providing a quantum well disposed between adjacent layers of said device;
- and
- providing a layer of quantum dots disposed in one of said adjacent layers, and spaced from said quantum well, whereby carriers tunnel in either direction between said quantum well and said quantum dots.
A method of forming a semiconductor device, comprising the steps of:
- providing a plurality of III-V semiconductor layers;
- providing a means for coupling signals to and/or from layers of said device;
- and
- providing a layer of doped quantum dots disposed in at least one of said layers as a source of carriers that communicate in either direction between said dots and another layer.
Dependencies are inferred from the claim text.