Photoconductive material imaging element

Abstract

A photoconductive material imaging element is described comprising a support and a silver halide emulsion imaging layer comprising silver halide grains which have not been chemically sensitized to optimize formation of latent image Agno, centers upon imagewise exposure and which are doped with at least 500 deep electron trapping agent dopant centers per grain. In accordance with a preferred embodiment, the photoconductive material imaging element includes a planar support and the non-chemically sensitized, deep electron trapping agent doped silver halide grains comprise tabular grains, preferably with an average grain size equivalent circular diameter of greater than 2 μm, with the long dimensions of the tabular grains primarily oriented parallel to the plane of the support.

Dependencies are inferred from the claim text.