Process for purifying single-wall carbon nanotubes and compositions thereof

A method for purifying single-wall carbon nanotubes comprising the steps of:

• (a) oxidizing a single-wall carbon nanotube material comprising single-wall carbon nanotubes, amorphous carbon, and a metallic impurity in an oxidizing gaseous atmosphere;
• (b) treating the single-wall carbon nanotube material with a solution comprising a halogen-containing acid;
• (c) performing a second oxidizing of the single-wall carbon nanotube material after the treating step, wherein the second oxidizing step is performed utilizing a gaseous atmosphere selected from the group consisting of the oxidizing gaseous atmosphere and a different oxidizing gaseous atmosphere than the oxidizing gaseous atmosphere, wherein the second oxidizing step is performed at a temperature higher than the oxidizing step;
• and
• (d) performing a second treating of the single-wall carbon nanotube material after the second oxidizing step, wherein the second treating step is performed utilizing an acid solution selected from the group consisting of the solution comprising the halogen-containing acid, a first different solution comprising the halogen-containing acid, and a second different solution comprising a different halogen-containing acid.

A method for purifying single-wall carbon nanotubes comprising the steps of:

• (a) oxidizing a single-wall carbon nanotube material comprising single-wall carbon nanotubes, amorphous carbon, and a metallic impurity in an oxidizing gaseous atmosphere;
• (b) treating the single-wall carbon nanotube material with a solution comprising a halogen-containing acid and
• (c) annealing the single-wall carbon nanotube material, wherein:
• (i) the annealing step is performed at a temperature between about 600° C. and about 1000° C.;
• and
• (ii) the annealing step utilizes an annealing gas mixture comprising a gas selected from the group consisting of inert gases, nitrogen, carbon dioxide, and combinations thereof.

A method for purifying single-wall carbon nanotubes comprising the steps of:

• (a) oxidizing a single-wall carbon nanotube material comprising single-wall carbon nanotubes, amorphous carbon, and a metallic impurity in an oxidizing gaseous atmosphere;
• (b) reduction of the single-wall carbon nanotube material;
• and
• (c) treating the single-wall carbon nanotube material with a solution comprising a halogen-containing acid.

A method for purifying single-wall carbon nanotubes comprising the steps of:

• (a) oxidizing a single-wall carbon nanotube material comprising single-wall carbon nanotubes, amorphous carbon, and a metallic impurity in an oxidizing gaseous atmosphere at a temperature between about 200° C. and about 500° C.;
• (b) reoxidizing the single-wall carbon nanotube material at a temperature higher than the oxidizing step;
• and
• (c) treating the single-wall carbon nanotube material with an aqueous solution comprising HCl.

A method for purifying carbon nanotubes comprising the steps of:

• (a) oxidizing a carbon nanotube material comprising carbon nanotubes, amorphous carbon, and a metallic impurity in an oxidizing gaseous atmosphere at a temperature between about 200° C. and about 500° C.;
• (b) reoxidizing the carbon nanotube material at a temperature higher than the oxidizing step;
• and
• (c) treating the carbon nanotube material with an aqueous solution comprising HCl.

A method for purifying single-wall carbon nanotubes comprising the steps of:

• (a) oxidizing a single-wall carbon nanotube material comprising single-wall carbon nanotubes, amorphous carbon, and a metallic impurity in an oxidizing gaseous atmosphere;
• (b) treating the single-wall carbon nanotube material with a solution comprising a halogen-containing acid;
• and
• (c) annealing the single-wall carbon nanotube material at a temperature between about 600° C. and about 1000° C.