Abatement of effluents from chemical vapor deposition processes using organometallic source reagents
AssigneeAdvanced Technology Materials, Inc.
InventorsMark Holst, Ray Dubois, Jose Arno, Rebecca Faller, Glenn Tom
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Abstract
A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organometallic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent.
Claims20
An apparatus for abatement of effluent from a CVD process using an organometallic copper source reagent, said apparatus comprising:
- a sorbent bed comprising sorbent material having sorptive affinity for the organometallic copper source reagent and decomposition byproducts thereof;
- and
- a flow path joining the sorbent bed in gas flow communication with the process, so that effluent is flowed through the gas flow path to the sorbent bed for at least partial removal of residual copper source reagent and decomposition products from the effluent;
- and
- a pump in the flow path.
An apparatus for abatement of effluent from a CVD process using an organometallic copper source reagent, said apparatus comprising:
- a sorbent bed comprising sorbent material having sorptive affinity for the organometallic copper source reagent and decomposition byproducts thereof;
- and
- a flow path joining the sorbent bed in gas flow communication with the process, so that effluent is flowed through the gas flow path to the sorbent bed for at least partial removal of residual copper source reagent and decomposition products from the effluent;
- and
- an endpoint detector arranged to detect breakthrough of an effluent component from said sorbent bed.
An apparatus for abatement of effluent from a CVD process for depositing copper on a substrate from a Cu(hfac)TMVS source reagent, said apparatus comprising:
- a sorbent bed having sorptive affinity for Cu(hfac)TMVS, Cu(hfac)2 and TMVS;
- a flow path joining the sorbent bed in gas flow communication with the process, so that effluent from the CVD process passes through said sorbent bed, to remove residual Cu(hfac)TMVS, Cu(hfac)2 and TMVS from the effluent;
- and
- a pump in said flow path.
An apparatus for abatement of effluent from a CVD process for depositing copper on a substrate from a Cu(hfac)TMVS source reagent, said apparatus comprising:
- a sorbent bed having sorptive affinity for Cu(hfac)TMVS, Cu(hfac)2 and TMVS;
- a flow path joining the sorbent bed in gas flow communication with the process, so that effluent from the CVD process flows through said sorbent bed, to remove residual Cu(hfac)TMVS, Cu(hfac)2 and TMVS from the effluent;
- and
- means for detecting the endpoint of sorption in the sorbent bed.
An apparatus comprising:
- a semiconductor manufacturing facility arranged to deposit copper on a substrate from an organocopper reagent, said facility including an organocopper reagent source and a CVD reactor coupled therewith, wherein said CVD reactor produces an effluent including residual organocopper reagent and decomposition byproducts of the organocopper reagent;
- a sorbent bed comprising sorbent material having sorptive affinity for the residual organocopper reagent and decomposition byproducts thereof;
- and
- a flow path joining the sorbent bed in gas flow communication with the CVD reactor, so that effluent is flowed through the gas flow path to the sorbent bed for at least partial removal of the residual organocopper reagent and decomposition byproducts from the effluent.
Dependencies are inferred from the claim text.