Hydrolytically stable grooved polishing pads for chemical mechanical planarization

A hydrolytically stable polishing pad useful for planarizing a surface of a semiconductor wafer;

• the pad comprising:
• a polishing layer for planarizing the surface, wherein the polishing layer has the following:
• i. a thickness of about 250 to 5,100 micrometers;
• ii. a hardness of about 40-70 Shore D;
• iii. a tensile Modulus of about 100-2,000 MPa at 40° C.;
• iv. an Energy Loss Factor, KEL, of about 100-1,000 (1/Pa at 40° C.);
• and
• v. an Elastic Storage Modulus, E′, ratio at 30° C. and 90° C. of about 1-5;
• the polishing layer having a macro-texture comprising a groove pattern having one or more grooves;
• the groove pattern having:
• i. a groove depth of about 75 to about 2,540 micrometers;
• ii. a groove width of about 125 to about 1,270 micrometers;
• and
• iii. a groove pitch of about 500 to 3,600 micrometers;
• the groove pattern being from the group consisting of random, concentric, spiral, cross-hatched, X-Y grid, hexagonal, triangular, fractal and combinations thereof.