Voltage recovery switch
AssigneeeMemory Technology Inc.
InventorChien-Hung Ho
Life of this patent
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Abstract
A voltage recovery switch for neutralizing a first voltage and a second voltage in a non-volatile memory. The voltage recovery switch includes a first PMOS transistor having a gate electrically connected to a third voltage and a source electrically connected to the first voltage, an NMOS transistor having a gate electrically connected to a control signal and a drain electrically connected to a drain of the first PMOS transistor, and a second PMOS transistor having a gate electrically connected to a fourth voltage, a source electrically connected to the source of the NMOS transistor, and a drain electrically connected to the second voltage.
Claims18
A voltage recovery switch for neutralizing a first voltage and a second voltage in a non-volatile memory, the voltage recovery switch comprising:
- a first PMOS transistor whereof a gate is electrically connected to a third voltage, and a source is electrically connected to the first voltage;
- an NMOS transistor whereof a gate is electrically connected to a control signal, and a drain is electrically connected to a drain of the first PMOS transistor;
- and
- a second PMOS transistor whereof a gate is electrically connected to a fourth voltage, a source is electrically connected to a source of the NMOS transistor, and a drain is electrically connected to the second voltage.
A method for neutralizing a first voltage and a second voltage, used in a non-volatile memory, the non-volatile memory having a voltage recovery switch, the voltage recovery switch having:
- a first PMOS transistor whereof a gate is electrically connected to a third voltage, and a source is electrically connected to the first voltage;
- an NMOS transistor whereof a gate is electrically connected to a control signal, and a drain is electrically connected to a drain of the first PMOS transistor;
- and
- a second PMOS transistor whereof a gate is electrically connected to a fourth voltage, a source is electrically connected to a source of the NMOS transistor, and a drain is electrically connected to the second voltage;
- the method comprising:
- turning off the NMOS transistor using the control signal, so as to turn off the voltage recovery switch;
- and
- turning on the NMOS transistor using the control signal, so as to turn on the voltage recovery switch, whereby both the first voltage and the second voltage discharge by sharing their electrical charges.
Dependencies are inferred from the claim text.