Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer

A magnetoresistance sensor structure comprising:

• a magnetoresistance sensor having a sensor surface plane, a transverse direction lying in the sensor surface plane, and a longitudinal direction lying perpendicular to the transverse direction and in the sensor surface plane, the magnetoresistance sensor comprising:
• a transverse biasing stack comprising:
• a transverse pinning layer made of a transverse-pinning-layer antiferromagnetic material, and
• a transverse pinned layer structure overlying the transverse pinning layer,
• a spacer layer overlying the transverse pinned layer structure,
• a sensing stack overlying the spacer layer, and
• an electrically insulating decoupling layer overlying the sensing stack;
• and
• a longitudinal biasing stack overlying the magnetoresistance sensor, the longitudinal biasing stack comprising:
• a longitudinal pinned layer, and
• a longitudinal pinning layer overlying the longitudinal pinned layer and made of a longitudinal-pinning-layer antiferromagnetic material.