US 6,747,748 B2Granted

Manufacturing method for a field-effect transistor, manufacturing method for a semiconductor device, and apparatus therefor

AssigneeTokyo Electron Limited

InventorsTatsuo Matsudo, Tomohiro Ohta, Tetsuji Yasuda, Masakazu Ichikawa, Takashi Nakayama

Life of this patent

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Abstract

In a process of forming a film on a surface of a wafer by thermal processing, laser light generated by a light source is depolarized by a depolarizer and the deporlarized light is irradiated upon the surface of wafer. As for the light reflected from the surface of wafer, polarization components in predetermined two directions perpendicular to each other are extracted by a beam splitter, and optical sensors receive the extracted light components to detect each intensity. An analytical processing unit determines a thickness of a formed film based on a change in a difference in intensity.

Claims10

Dependent claims

A manufacturing method for a field-effect transistor comprising steps of:

heating a semiconductor substrate which is rotated with a predetermined rotational frequency in a predetermined gas atmosphere to advance a reaction between said gas atmosphere and said semiconductor substrate inwardly from a surface of said semiconductor substrate such that an insulating film formed by said reaction grows from the surface of said semiconductor substrate toward an inside of said semiconductor substrate:
irradiating light which is modulated with said predetermined rotational frequency upon the surface of said semiconductor substrate during said heating step and detecting intensity synchronizing with a frequency twice as large as said predetermined rotational frequency of polarization components in two directions perpendicular to each other of light reflected from an interface between said semiconductor substrate and said grown insulating film, to obtain a thickness of said insulating film in a unit of atomic layer based on a change in the detected intensity;
detecting an end point of said reaction based on the film thickness obtained in said irradiating step to terminate said heating step;
forming a dielectric film, having a dielectric constant higher than said insulating film, on said insulating film;
and
forming a gate electrode on said dielectric film.

3 more elements

A manufacturing method for a semiconductor device comprising steps of:

advancing a reaction toward an inside of a target which is rotated with a predetermined rotational frequency to form a film in a surface area of said target;
irradiating light which is modulated with said predetermined rotational frequency upon the surface area of said target;
detecting intensity synchronizing with a frequency twice as large as said predetermined rotational frequency of polarization components in two directions perpendicular to each other of the irradiated light which is reflected from the surface of said target;
obtaining a thickness of said film formed in said reaction based on a change in the intensity of polarization components of said reflected light detected;
and
controlling said reaction based on a film thickness obtained.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/974,195Filed 10 Oct 2001
Priority: JP 2000-31096811 Oct 2000
Published: US 2002/0115304 A122 Aug 2002
Granted: 8 Jun 2004
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10P 72/0454
Characterised by the layout of the process chambers: surrounding a central transfer chamber
H10D 64/0134
On single crystalline silicon, e.g. chemical oxidation using a liquid: with a treatment, e.g. annealing, after the formation of the insulator and…
H10D 64/01346
On single crystalline silicon, e.g. chemical oxidation using a liquid: in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation…
H10D 64/685
Having a compositional variation, e.g. multilayered: being perpendicular to the channel plane