Semiconductor device and method of manufacturing of the same
AssigneeSharp Kabushiki Kaisha
InventorsShinji Yamaguchi, Takuro Asazu, Atsushi Ono
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Abstract
A defect-free film is formed on a surface of a protrusive electrode. An immersion Au film is formed on the surface of the protrusive electrode, after a gap which an immersion Au plating liquid can enter evenly is formed between a protrusive electrode made of Ni or a Ni alloy on an electrode pad made of Al or mainly made of Al and a protective coat by etching.
Claims14
A semiconductor device comprising a protrusive electrode on a part of a surface of an electrode pad on a semiconductor substrate;
- a protective coat which covers remaining exposed portions of the surface of the electrode pad;
- a gap more than 0.05 μm wide between the protective coat and the protrusive electrode;
- and
- a layer covering the entire protrusive electrode, including the gap between the protrusive electrode and the protective coat, for preventing oxidation of exposed surfaces of the protrusive electrode;
- wherein the layer, covering the entire protrusive electrode and within the gap, comprises an immersion plated film and an electroless plated film.
A semiconductor device comprising a protrusive electrode on a part of a surface of an electrode pad on a semiconductor substrate;
- a protective coat which covers remaining exposed portions of the surface of the electrode pad;
- a gap between the protective coat and the protrusive electrode;
- and
- a layer covering the entire protrusive electrode, including the gap between the protrusive electrode and the protective coat, for preventing oxidation of exposed surfaces of the protrusive electrode;
- wherein the layer, covering the entire protrusive electrode and within the gap, comprises an immersion plated film and an electroless plated film.
Dependencies are inferred from the claim text.