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US 6,747,339 B1Granted
Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate
AssigneeHitachi, Ltd.
InventorsKiichiro Mukai, Atsushi Saiki, Seiki Harada
Life of this patent
Estimating the term…
Abstract
A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 μm thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.
Claims63
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- at least one active element provided in an upper surface region of said body;
- a first insulating film of inorganic insulating material formed on said upper surface of said semiconductor body;
- an interconnection having a predetermined portion formed on said first insulating film and electrically connected with a predetermined portion of said active element;
- a second insulating film of inorganic insulating material formed over said interconnection so as to expose the predetermined portion of said interconnection through a window, said second insulating film consisting essentially of silicon nitride or phosphosilicate glass;
- a bonding wire electrically connected with said exposed predetermined portion of said interconnection;
- and
- a third insulating film of organic resin material formed on said second insulating film and over said active element, said third insulating film reduced the number of alpha particles which penetrate into said active element;
- said organic resin material being a member selected from the group consisting of polyimide isoindoloquinazolinedione and polyimide and containing less than 40 ppb of uranium and thorium;
- said second insulating film being constructed and arranged between said third insulating film and first insulating film to prevent the penetration of alkali impurities into said active element in said body which come from the third insulating film of organic resin material.
7 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- at least one active element provided in an upper surface region of said body;
- a first insulating film of inorganic insulating material formed on said upper surface of said semiconductor body;
- an interconnection having a predetermined portion formed on said first insulating film and electrically connected with a predetermined portion of said active element;
- a second insulating film of inorganic insulating material formed over said interconnection so as to expose the predetermined portion of said interconnection through a window, said second insulating film consisting essentially of silicon nitride or phosphosiicate glass;
- a bonding wire electrically connected with said exposed predetermined portion of the interconnection;
- and
- a third insulating film of organic resin material formed on said second insulating film and over said active element, said third insulating film reducing the number of alpha particles which penetrate into said active element;
- said organic resin material being a member selected from the group consisting of polyimide isoindoloquinazolinedione and polyimide and containing less than 40 ppb of uranium and thorium;
- said second insulating film being constructed and arranged between said third insulating film and first insulating film to prevent the penetration of alkali impurities into said active element in said body which come from the third insulating film of organic resin material, wherein said second insulating film consists essentially of phosphosilicate glass.
7 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- at least one active element provided in an upper surface region of said body;
- a first insulating film of inorganic insulating material formed on said upper surface of said semiconductor body;
- an interconnection having a predetermined portion formed on said first insulating film and electrically connected with a predetermined portion of said active element;
- a second insulating film of inorganic insulating material formed over said interconnection so as to expose the predetermined portion of said interconnection through a window, said second insulating film consisting essentially of silicon nitride or phosphosilicate glass;
- a bonding wire electrically connected with said exposed predetermined portion of the interconnection;
- and
- a third insulating film of organic resin material formed on said second insulating film and over said active element, said third insulating third reducing the number of alpha particles which penetrates into said active element;
- said organic resin material being a member selected from the group consisting of polyimide isoindoloquinazolinedione and polyimide and containing less than 40 ppb of uranium and thorium;
- said second insulating film being constructed and arranged between said third insulating film and first insulating film to prevent the penetration of alkali impurities into said active element in said body which come from the third insulating film of organic resin material, wherein said third insulating film is selectively formed on said second insulating film, wherein said second film consists essentially of phosphosilicate glass.
7 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- at least one active element formed in an upper surface region of said body;
- an interconnection having a predetermined portion and electrically coupled to a predetermined portion of said active element;
- a first insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film of organic resin material;
- a second insulating film interposed between said first insulating film and said third insulating film and formed over said interconnection;
- and
- a bonding wire directly connected with said predetermined portion of said interconnection;
- said organic resin material being a member selected from the group consisting of polyimide and polyimide isoindoloquinazolinedione and serving to reduce number of alpha particles which penetrate into said active element;
- said second insulating film comprising silicon nitride or phosphosilicate glass, said second insulating film being constructed and arranged between said third insulating film and said first insulating film to prevent and penetration of alkali impurities into said active element that come from the third insulating film of organic resin material.
7 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- at least one active element formed in an upper surface region of said body;
- an interconnection having a predetermined portion and electrically coupled to a predetermined portion of said active element;
- a first insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film of organic resin material;
- a second insulating film interposed between said first insulating film and said third insulating film and formed over said interconnection;
- and
- a bonding wire directly connected with said predetermined portion of said interconnection;
- said organic resin material being a member selected from the group consisting of polyimide and polyimide isoindoloquinazolinedione and serving to reduce number of alpha particles which penetrate into said active element;
- said second insulating film comprising phosphosilicate glass, said second insulating film being constructed and arranged between said third insulating film and said first insulating film to prevent the penetration of alkali impurities into said active element that come from the third insulating film of organic resin material, wherein said second insulating film has a window through which said predetermined portion of the interconnection is exposed.
7 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor device;
- at least one active element formed in an upper surface region of said body;
- an interconnection having a predetermined portion and electrically coupled to a predetermined portion of said active element;
- a first insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film of organic resin material;
- a second insulating film interposed between said first insulating film and said third insulating film and formed over said interconnection;
- and
- a bonding wire directly connected with said predetermined portion of said interconnection;
- said organic resin material being a member selected from the group consisting of polyimide and polyimide isoindoloquinazolinedione and serving to reduce number of alpha particles which penetrate into said active element;
- said second insulating film being constructed and arranged between said third insulating film and said first insulating film to prevent the penetration of alkali impurities into said active element that come from the third insulating film of organic resin material, wherein said third insulating film is selectively formed on said second insulating film having a window through which said predetermined portion of the interconnection is exposed, and wherein said second insulating film comprises phosphosilicate glass.
7 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- an active element formed in an upper surface region of said semiconductor body;
- an interconnection having a predetermined portion and electricity coupled to a predetermined portion of said active element;
- a first insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film comprising a member selected from the group consisting of polyimide isoindoloquinazolinedione and polyimide for covering said active element and reducing the number of alpha particles which penetrate into said active element;
- a second insulating film comprising silicon nitride or phosphosilicate glass interposed between said first insulating film and said third insulating film and formed over said interconnection and over said active element;
- a window formed in said second and third insulating films through which said predetermined portion of said interconnection is exposed;
- and,
- a bonding wire directly connected with said predetermined portion of said interconnection through said window;
- said second insulating film being constructed and arranged between said third insulating film and said first insulating film to prevent the penetration of alkali impurities from said third insulating film into said active element.
7 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- an active element formed in an upper surface region of said semiconductor body;
- an interconnection having a predetermined portion and electricity coupled to a predetermined portion of said active element;
- a first insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film comprising a member selected from the group consisting of polyimide isoindoloquinazolinedione and polyimide for covering said active element and reducing the number of alpha particles which penetrate into said active element;
- a second insulating film comprising silicon nitride or phosphosilicate glass interposed between said first insulating film and said third insulating film and formed over said interconnected and over said active element;
- a window formed in said second and third insulating films through which said predetermined portion of said interconnection is exposed;
- and,
- a bonding wire directly connected with said predetermined portion of said interconnection through said window;
- said second insulating film being constructed and arranged between said third insulating film and said first insulating film to prevent the penetration of alkali impurities from said third insulating film into said active element, wherein said bonding wire is apart from a side wall portion of said window.
7 more elements
A monolithic integrate circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- an active element formed in an upper surface region of said semiconductor body;
- an interconnection having a predetermined portion and electricity coupled to a predetermined portion of said active element;
- a first insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film comprising a member selected from the group consisting of polyimide isoindoloquinazolinedione and polyimide for covering said active element and reducing the number of alpha particles which penetrate into said active element;
- a second insulating film comprising silicon nitride or phosphosilicate glass interposed between said first insulating film and said third insulating film and formed over said interconnection and over said active element;
- a window formed in said second and third insulating films through which said predetermined portion of said interconnection is exposed;
- and,
- a bonding wire directly connected with said predetermined portion of said interconnection through said window;
- said second insulating film being constructed and arranged between said third insulating film and said first insulating film to prevent the penetration of alkali impurities from said third insulating film into said active element, wherein said predetermined portion of said interconnection is formed on said first insulating film.
7 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- at least one active element formed in an upper surface region of said body;
- an interconnection having a predetermined portion and electrically coupled to a predetermined portion of said active element;
- a first insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film of an organic resin material selected from a group consisting of a polyimide and polyimide isoindoloquinazolinedione and formed over said active element for covering said active element and reducing the number of alpha particles which penetrate into said active element;
- a second insulating film being constructed and arranged to prevent penetration of alkali impurities that come from said third insulating film of the organic resin material into said active element, said second insulating film being interposed between said first insulating film and third insulating film, and being formed over said active element;
- and
- a bonding wire directly connected with said predetermined portion of said interconnection.
6 more elements
A monolithic integrate circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- at least one active element formed in an upper surface region of said body;
- an interconnection having a predetermined portion and electrically coupled to a predetermined portion of said active element;
- a first insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film of an organic resin material selected from a group consisting of a polyimide and polyimide isoindoloquinazolinedione and formed over said active element for covering said active element and reducing the number of alpha particles which penetrate into said active element;
- a second insulating film being constructed and arranged to prevent penetration of alkali impurities that come from said third insulating film of the organic resin material into said active element, said second insulating film being interposed between said first insulating film and third insulating film, and being formed over said active element;
- and
- a bonding wire directly connected with said predetermined portion of said interconnection, wherein said second insulating film comprises phosphosilicate glass having a window through which said predetermined portion of the interconnection is exposed.
6 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body;
- at least one active element formed in an upper surface region of said body;
- an interconnection having a predetermined portion and electrically coupled to a predetermined portion of said active element;
- a first insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film of a first inorganic material interposed between said active element and said interconnection;
- a third insulating film of an organic resin material selected from a group consisting of a polyimide and polyimide isoindoloquinazolinedione and formed over said active element for covering said active element and reducing the number of alpha particles which penetrate into said active element;
- a second insulating film being constructed and arranged to prevent penetration of alkali impurities that come from said third insulating film of the organic resin material into said active element, said second insulating film being interposed between said first insulating film and third insulating film, and being formed over said active element;
- and
- a bonding wire directly connected with said predetermined portion of said interconnection, wherein said second insulating film comprises phosphosilicate glass.
6 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body having an active element formed in an upper surface region;
- a first inorganic insulating layer covering at least a portion of said upper surface;
- a second inorganic insulating layer consisting of at least one of a phosphosilicate glass and silicon nitride formed on at least a portion of said first inorganic insulating layer and over at least a portion of said upper surface which includes said active element;
- and
- at least one insulating layer of organic material formed on said second inorganic layer and over said at least a portion of said upper surface which includes said active element, said organic material being selected from a group consisting of polyimide and polyimide isoindoloquinazolinedione for covering said active element and reducing the number of alpha particles which penetrate into said active element, said second inorganic insulating layer being constructed and arranged between said at least one insulating layer of organic material and said active element to prevent the penetration of alkali impurities from said insulating layer of organic material into said active element formed in said body.
2 more elements
A monolithic integrated circuit device having reduced errors caused by the penetration of alpha particles into an active element thereof, said device comprising:
- a semiconductor body having an active element formed in an upper surface region;
- a first inorganic insulating layer covering at least a portion of said upper surface;
- a second inorganic insulating layer formed on at least a portion of said for inorganic insulating layer and over at least a portion of said upper surface which includes said active element;
- and
- at least one insulating layer of organic material formed on said second inorganic layer and over said at least a portion of said upper surface which includes said active element, said organic material being selected from a group consisting of polyimide and polyimide isoindoloquinazolinedione for covering said active element and reducing the number of alpha particles which penetrate into said active element, said second inorganic insulating layer being constructed and arranged between said at least one insulating layer of organic material and said active element to prevent the penetration of alkali impurities from said insulating layer of organic material into said active element formed in said body;
- wherein said second inorganic layer is phosphosilicate glass.
3 more elements
A monolithic integrated circuit semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film of an inorganic insulating material having a window formed on a main surface of said semiconductor substrate,
- an interconnection formed on said first insulating film and electrically connected to said main surface of said semiconductor substrate through said window,
- a second insulating film of a material selected from a group consisting of phosphosilicate glass and silicon nitride formed on desired portions of said first insulating film and said interconnection so as to expose a part of a surface of said interconnection,
- a bonding wire electrically connected to the exposed part of said surface of said interconnection,
- a third insulating film of a material selected from the group consisting of polyimide-isoindro-quinazolinzion resin and polyimide resin formed on said second insulating film.
3 more elements
Dependencies are inferred from the claim text.