Semiconductor component having high voltage MOSFET and method of manufacture

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type;
• a first semiconductor device at least in a first portion of the semiconductor substrate;
• and
• a second semiconductor device at least in a second portion of the semiconductor substrate,
• wherein:
• the first semiconductor device further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the semiconductor substrate;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the body region is isolated from the second portion of the semiconductor substrate by the isolation region and the first electrode region;
• the second electrode region is located between a first portion of the body region and a second portion of the body region;
• the second portion of the body region is located between the second electrode region and the first electrode region;
• and
• the first semiconductor device further comprises:
• a dielectric isolation region at least partially in the first portion of the semiconductor substrate between the second portion of the body region and the second electrode region.

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type;
• a first semiconductor device at least in a first portion of the semiconductor substrate;
• and
• a second semiconductor device at least in a second portion of the semiconductor substrate,
• wherein:
• the first semiconductor device further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the semiconductor substrate;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the body region is isolated from the second portion of the semiconductor substrate by the isolation region and the first electrode region;
• and
• the first semiconductor device further comprises:
• a dielectric isolation region at least partially in the first portion of the semiconductor substrate between a portion of the first electrode region and a first portion of the body region.

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type;
• a first semiconductor device at least in a first portion of the semiconductor substrate;
• and
• a second semiconductor device at least in a second portion of the semiconductor substrate,
• wherein:
• the first semiconductor device further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the semiconductor substrate;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the body region is isolated from the second portion of the semiconductor substrate by the isolation region and the first electrode region;
• a first portion of the body region is located between the second electrode region and a first portion of the first electrode region;
• the second electrode region is located between the first portion of the body region and a second portion of the body region;
• and
• the second portion of the body region is located between the second electrode region and a second portion of the first electrode region.

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type;
• a first semiconductor device at least in a first portion of the semiconductor substrate;
• and
• a second semiconductor device at least in a second portion of the semiconductor substrate,
• wherein:
• the first semiconductor device further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the semiconductor substrate;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the body region is isolated from the second portion of the semiconductor substrate by the isolation region and the first electrode region;
• the semiconductor substrate comprises:
• a monocrystalline substrate;
• and
• an epitaxial layer over the monocrystalline substrate;
• the first electrode region, the second electrode region, the body region, and the isolation region are located in the epitaxial layer;
• and
• a portion of the epitaxial layer is located between the isolation region and the monocrystalline substrate.

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type;
• a first semiconductor device at least in a first portion of the semiconductor substrate;
• and
• a second semiconductor device at least in a second portion of the semiconductor substrate,
• wherein:
• the first semiconductor device further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the semiconductor substrate;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the body region is isolated from the second portion of the semiconductor substrate by the isolation region and the first electrode region;
• and
• the isolation region is absent underneath a portion of the first electrode region.

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type and comprising:
• a monocrystalline substrate;
• and
• an epitaxial layer over the monocrystalline substrate;
• a MOSFET at least in a first portion of the epitaxial layer;
• and
• a semiconductor device at least in a second portion of the epitaxial layer,
• wherein:
• the MOSFET further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the epitaxial layer;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the isolation region and the first electrode region are contiguous with each other;
• the second electrode region is isolated from the first electrode region by the body region;
• and
• the body region is isolated from the second portion of the epitaxial layer by the isolation region and the first electrode region.

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type and comprising:
• a monocrystalline substrate;
• and
• an epitaxial layer over the monocrystalline substrate;
• a MOSFET at least in a first portion of the epitaxial layer;
• and
• a semiconductor device at least in a second portion of the epitaxial layer,
• wherein:
• the MOSFET further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the epitaxial layer;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the isolation region and the first electrode region are continuous with each other;
• the second electrode region is isolated from the first electrode region by the body region;
• the body region is isolated from the second portion of the epitaxial layer by the isolation region and the first electrode region;
• and
• the semiconductor component remains operational when the second electrode region is reverse biased relative to the body region.

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type and comprising:
• a monocrystalline substrate;
• and
• an epitaxial layer over the monocrystalline substrate;
• a MOSFET at least in a first portion of the epitaxial layer;
• and
• a semiconductor device at least in a second portion of the epitaxial layer,
• wherein:
• the MOSFET further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the epitaxial layer;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the isolation region and the first electrode region are contiguous with each other;
• the second electrode region is isolated from the first electrode region by the body region;
• the body region is isolated from the second portion of the epitaxial layer by the isolation region and the first electrode region;
• the MOSFET is asymmetrical;
• and
• the MOSFET is bi-directional.

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type and comprising:
• a monocrystalline substrate;
• and
• an epitaxial layer over the monocrystalline substrate;
• a MOSFET at least in a first portion of the epitaxial layer;
• and
• a semiconductor device at least in a second portion of the epitaxial layer,
• wherein:
• the MOSFET further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the epitaxial layer;
• a drain electrode overlying the first electrode region;
• a source electrode overlying the second electrode region;
• a gate electrode overlying a first portion of the body region;
• and
• a body electrode overlying a second portion of the body region;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the isolation region and the first electrode region are contiguous with each other;
• the second electrode region is isolated from the first electrode region by the body region;
• the body region is isolated from the second portion of the epitaxial layer by the isolation region and the first electrode region;
• the first portion of the body region is a channel region for the MOSFET;
• and
• the MOSFET still further comprises:
• a first oxide region at least partially in the first portion of the epitaxial layer between a portion of the first electrode region and the first portion of the body region;
• and
• a second oxide region at least partially in the first portion of the epitaxial layer and between the second portion of the body region and the second electrode region.

A semiconductor component comprising:

• a semiconductor substrate having a first conductivity type and comprising:
• a monocrystalline substrate;
• and
• an epitaxial layer over the monocrystalline substrate;
• a MOSFET at least in a first portion of the epitaxial layer;
• and
• a semiconductor device at least in a second portion of the epitaxial layer,
• wherein:
• the MOSFET further comprises:
• a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the epitaxial layer;
• the body region has the first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• the isolation region and the first electrode region are contiguous with each other;
• the second electrode region is isolated from the first electrode region by the body region;
• and
• the body region is isolated from the second portion of the epitaxial layer by the isolation region and the first electrode region;
• the MOSFET further comprises:
• a drain electrode overlying the first electrode region;
• a source electrode overlying the second electrode region;
• a gate electrode overlying a first portion of the body region;
• and
• a body electrode overlying a second portion of the body region;
• the first portion of the body region is a channel region for the MOSFET;
• the first portion of the body region is located between the second electrode region and a first portion of the first electrode region;
• the second electrode region is located between the first portion of the body region and the second portion of the body region;
• and
• the second portion of the body region is located between the second electrode region and a second portion of the first electrode region.

A method of manufacturing a semiconductor component comprising:

• forming a first semiconductor device at least in a first portion of a semiconductor substrate;
• and
• forming a second semiconductor device at least in a second portion of the semiconductor substrate,
• wherein:
• forming the first semiconductor device and forming the second semiconductor device occur simultaneously with each other;
• forming the first semiconductor device further comprises:
• forming a first electrode region, a second electrode region, a body region, and an isolation region in the first portion of the semiconductor substrate;
• the body region has a first conductivity type;
• the first electrode region, the second electrode region, and the isolation region have a second conductivity type;
• the second electrode region has a different doping concentration than the first electrode region;
• and
• the body region is isolated from the second portion of the semiconductor substrate by the isolation region and the first electrode region.