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US 6,747,317 B2Granted
Semiconductor device
AssigneeFujitsu Limited
InventorsMasao Kondo, Kazuaki Kurihara, Kenji Maruyama, Hideki Yamawaki
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Abstract
The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.
Claims6
A semiconductor device comprising:
- a single-crystal silicon substrate;
- and
- a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate, said single-crystal oxide thin film being directly in contact with a surface of the single-crystal silicon substrate, and containing a bivalent metal that is reactive to silicon.
A semiconductor device comprising:
- a single-crystal silicon substrate;
- a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate;
- and
- an amorphous silicon layer interposed between the single-crystal silicon substrate and the single-crystal oxide thin film.
1 more element
Dependencies are inferred from the claim text.