Semiconductor device and method of fabricating thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideomi Suzawa, Koji Ono
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Abstract
To provide means for forming projected and recessed portions for preventing mirror face reflection of a reflecting electrode without increasing steps, in a method of fabricating a reflection type liquid crystal display device, to achieve light scattering performance by providing recessed and projected portions at a surface of a pixel electrode, projected portions 701 and 702 are formed by the same photomask as that in forming TFT to thereby form projected and recessed portions at a surface of a pixel electrode 169.
Claims35
A semiconductor device comprising:
- a thin film transistor comprising a semiconductor layer over a substrate and a gate electrode with an insulating film interposed therebetween;
- a plurality of projected portions over said substrate;
- an interlayer insulating film covering said thin film transistor and said plurality of projected portions, said interlayer insulating film having a projected and recessed surface;
- and
- a pixel electrode electrically connected to said thin film transistor, said pixel electrode having a projected and recessed surface on said interlayer insulating film,
- wherein said projected surface of said pixel electrode has a radius of curvature from 0.1 to 4 μm.
A semiconductor device comprising:
- a thin film transistor comprising a semiconductor layer on an insulating surface, an insulating film on said semiconductor layer and a gate electrode on said insulating film;
- a plurality of projected portions on said insulating surface;
- a pixel electrode having a projected and recessed surface, and electrically connected to said thin film transistor,
- wherein said projected surface of said pixel electrode has a radius of curvature from 0.1 to 4 μm.
A semiconductor device comprising:
- a thin film transistor comprising a semiconductor layer over a substrate and a gate electrode with an insulating film interposed therebetween;
- a plurality of projected portions over said substrate;
- an interlayer insulating film covering said thin film transistor and said plurality of projected portions, said interlayer insulating film having a projected and recessed surface;
- and
- a pixel electrode electrically connected to said thin film transistor, said pixel electrode having a projected and recessed surface on said interlayer insulating film,
- wherein said projected surface of said pixel electrode has a radius of curvature from 0.1 to 4 μm.
A semiconductor device comprising:
- a thin film transistor comprising a semiconductor layer on an insulating surface, an insulating film on said semiconductor layer and a gate electrode on said insulating film;
- a plurality of projected portions on said insulating film;
- a pixel electrode having a projected and recessed surface, and electrically connected to said thin film transistor,
- wherein said projected surface of said pixel electrode has a radius of curvature from 0.1 to 4 μm.
Dependencies are inferred from the claim text.