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US 6,747,288 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideaki Kuwabara, Yasuyuki Arai
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Abstract
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
Claims12
A semiconductor device comprising:
- a gate wiring formed on an insulating surface;
- an insulating film formed on said gate wiring;
- an amorphous semiconductor film formed on said insulating film;
- a source region and a drain region formed on said amorphous semiconductor film;
- a source wiring and an electrode formed on said source region and said drain region, respectively;
- a pixel electrode formed on said electrode;
- and
- a passivation film formed over the pixel electrode,
- wherein one end surface of said drain region corresponds with an end surface of said insulating film, an end surface of said amorphous semiconductor film and an end surface of said electrode, and
- wherein the passivation film is in contact with the amorphous semiconductor film in a region between the source region and the drain region.
7 more elements
A semiconductor device comprising:
- a gate wiring formed on an insulating surface;
- an insulating film formed on said gate wiring;
- an amorphous semiconductor film formed on said insulating film;
- a source region and a drain region formed on said amorphous semiconductor film;
- a source wiring and an electrode formed on said source region and said drain region, respectively;
- a pixel electrode formed on said electrode;
- and
- a passivation film formed over the pixel electrode,
- wherein one end surface of said drain region corresponds with an end surface of said insulating film, an end surface of said amorphous semiconductor film and an end surface of said electrode;
- and
- wherein the other end surface of said drain region corresponds with an end surface of said pixel electrode and the other end surface of said electrode, and
- wherein the passivation film is in contact with the amorphous semiconductor film in a region between the source region and the drain region.
9 more elements
A semiconductor device comprising:
- a gate electrode formed on an insulating surface;
- an insulating film formed on said gate electrode;
- a first semiconductor film formed on said insulating film;
- a pair of second semiconductor films formed on said first semiconductor film;
- a pair of electrodes formed on said second semiconductor films, respectively;
- a pixel electrode formed on said electrodes;
- and
- a passivation film formed over the pixel electrode,
- wherein outer side edges of the insulating film, the first semiconductor film, the second semiconductor films, and the electrodes are aligned,
- wherein said outer side edges are covered with the pixel electrode, and
- wherein the passivation film is in contact with the first semiconductor film in a region between the pair of second semiconductor films.
8 more elements
A semiconductor device comprising:
- a gate electrode formed on an insulating surface;
- an insulating film formed on said gate electrode;
- a first semiconductor film formed on said insulating film;
- a pair of second semiconductor films formed on said first semiconductor film;
- a pair of electrodes formed on said second semiconductor films, respectively;
- a pixel electrode formed on said electrodes;
- and
- a passivation film formed over the pixel electrode,
- wherein inner side edges of the first semiconductor film, the second semiconductor films, the electrodes, and the pixel electrode are aligned, and
- wherein outer side edges of the insulating film, the first semiconductor film, the second semiconductor films, and the electrodes are in contact with the pixel electrode, and
- wherein the passivation film is in contact with the first semiconductor film in a region between the pair of second semiconductor films.
8 more elements
Dependencies are inferred from the claim text.