Method of forming copper sulfide for memory cell
AssigneeAdvanced Micro Devices, Inc.
InventorsMinh Van Ngo, Sergey D. Lopatin, Suzette K. Pangrle, Nicholas H. Tripsas, Hieu T. Pham
Life of this patent
Estimating the term…
Abstract
An organic memory cell made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer and passive layer. The controllably conductive media changes its impedance when an external stimuli such as an applied electric field is imposed thereon. Methods of making the organic memory devices/cells, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.
Claims20
A method of making an organic memory cell comprising:
- providing a first electrode comprising at least copper;
- contacting a sulfide compound with the first electrode to form a copper sulfide region in a portion of the first electrode, wherein the sulfide compound is contacted with the first electrode for a time from about 1 minute to about 10 minutes at a temperature from about 200° C. to about 450° C.;
- forming an organic semiconductor layer over the copper sulfide region, the organic semiconductor layer comprising at least one of a conjugated organic polymer, a conjugated organometallic compound, a conjugated organometallic polymer, a buckyball, and a carbon nanotube;
- and
- forming a second electrode over the organic semiconductor layer.
A method of making an organic memory cell comprising:
- providing a first electrode comprising at least a copper portion, wherein the copper portion has a copper oxide layer thereover;
- heating the first electrode to remove the copper oxide layer from the copper portion;
- contacting a sulfide compound mixture with the first electrode to form a copper sulfide region in the copper portion of the first electrode, wherein the sulfide compound mixture comprises from about 0.5% to about 20% by weight of at least one sulfide compound and from about 80% to about 99.5% by weight of at least one inert gas;
- forming an organic semiconductor layer over the copper sulfide region, the organic semiconductor layer comprising at least one of a conjugated organic polymer, a conjugated organometallic compound, a conjugated organometallic polymer, a buckyball, and a carbon nanotube;
- and
- forming a second electrode over the organic semiconductor layer.
A method of making an organic memory cell comprising:
- providing a first electrode comprising copper;
- contacting hydrogen sulfide with the first electrode to form a copper sulfide region in a portion of the first electrode, wherein the hydrogen sulfide is contacted with the first electrode for a time from about 1 second to about 3 minutes at a temperature from about 150° C. to about 500° C.;
- forming an organic semiconductor layer over the copper sulfide region, the organic semiconductor layer comprising at least one of a conjugated organic polymer, a conjugated organometallic compound, a conjugated organometallic polymer, a buckyball, and a carbon nanotube;
- and
- forming a second electrode over the organic semiconductor layer.
Dependencies are inferred from the claim text.