Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• preparing a substrate to be treated;
• and
• forming an insulation film above the substrate, which includes;
• applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance;
• heating the substrate to a first heating temperature and holding the first heating temperature constant;
• and
• curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate at a second heating temperature different from the first heating temperature in a reactor chamber and holding the second heating temperature constant, and changing temperature of the substrate from the second heating temperature to a third heating temperature different form the second heating temperature and holding the third heating temperature constant during the electron beam irradiating process,
• wherein the third heating temperature is lower than the second heating temperature.