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US 6,746,967 B2Granted
Etching metal using sonication
AssigneeIntel Corporation
InventorsJustin K. Brask, Boyan Boyanov
Life of this patent
Estimating the term…
Abstract
A technique in accordance with the invention includes obtaining a semiconductor structure that has a metal disposed thereon. At least a portion of the metal is etched using an etching fluid while sonic energy is applied to the etching fluid.
Claims41
A method comprising:
- obtaining a semiconductor structure having a metal disposed thereon;
- and
- etching at least a portion of the metal using an etching fluid while applying sonic energy to the etching fluid.
A method comprising:
- obtaining a semiconductor structure having nickel disposed thereon and a region containing germanium;
- and
- etching at least some of the nickel using an etching fluid while applying sonic energy to the etching fluid.
A method comprising:
- obtaining a semiconductor structure having a germanium region and a metal disposed on the semiconductor structure;
- and
- etching at least a portion of the metal while applying sonic energy to an etching fluid.
A method comprising:
- obtaining a semiconductor structure having a region capable of being dissolved by a first etching fluid that includes an oxidant;
- and
- etching at least a portion of a layer deposited on the substrate using a second etching fluid that does not include the oxidant while applying sonic energy to the second etching fluid.
A method comprising:
- etching at least some of a metal disposed on a semiconductor structure using an oxidant-free etching fluid;
- and
- applying sonic energy to the etching fluid while etching.
A method comprising:
- obtaining a germanium substrate having a metal disposed thereon;
- and
- etching at least a portion of the metal using an etching fluid while applying sonic energy to the etching fluid.
Dependencies are inferred from the claim text.