Manufacturing method of semiconductor device

A method of producing a semiconductor device, comprising:

• forming a semiconductor layer over an insulating substrate;
• forming a gate insulating film over said semiconductor layer;
• forming a first layer gate electrode over said gate insulating film;
• forming a second layer gate electrode over said first layer gate electrode;
• forming a resist pattern comprising a positive type resist, which contains a photo-absorbent of diazonaphthoquinone (DNQ)-novolac resin series, over said second layer gate electrode;
• forming a first shaped gate electrode by subjecting said first layer gate electrode and said second layer gate electrode to dry etching using said resist pattern as a mask;
• forming a first impurity area by injecting a single-conductive impurity element into said semiconductor layer using said first shaped gate electrode as a mask;
• forming a second shaped gate electrode in which said first layer gate electrode is longer than said second layer gate electrode in dimension of the channel direction by subjecting said first shaped gate electrode to dry etching using said resist pattern as a mask;
• and
• forming a second impurity area positioned under said first layer gate electrode and a third impurity area sandwiched between said first impurity area and said second impurity area by injecting said impurity element into said semiconductor layer using said second shaped gate electrode as a mask,
• wherein the density of the photo-absorbent contained in said positive type resist, which contains the photo-absorbent, is controlled, the taper angle of side wall of said resist pattern is set to a predetermined taper angle and the dimension in the channel direction of said second impurity area is set to a predetermined dimension.

A method of producing a semiconductor device, comprising:

• forming a semiconductor layer over an insulating substrate;
• forming a gate insulating film over said semiconductor layer;
• forming a first layer gate electrode over said gate insulating film;
• forming a second layer gate electrode over said first layer gate electrode;
• forming a resist pattern comprising a positive type resist, which contains photo-absorbent of diazonaphthoquinone (DNQ)-novolac resin series, over said second layer gate electrode;
• forming a first shaped gate electrode by subjecting said first layer gate electrode and said second layer gate electrode to dry etching using said resist pattern as a mask;
• forming a first impurity area by injecting a single-conductive impurity element into said semiconductor layer using said first shaped gate electrode as a mask;
• forming a second shaped gate electrode in which said first layer gate electrode is longer than said second layer gate electrode in dimension of the channel direction by subjecting said first shaped gate electrode to dry etching using said resist pattern as a mask;
• forming a second impurity area positioned under said first layer gate electrode and a third impurity area sandwiched between said first impurity area and said second impurity area by injecting said impurity element into said semiconductor layer using said second shaped gate electrode as a mask;
• and
• forming a third shaped gate electrode by selectively subjecting said first layer gate electrode included by said second shaped gate electrode to etching,
• wherein the density of photo-absorbent contained in said positive type resist, which contains the photo-absorbent, is controlled, the taper angle of side wall of said resist pattern is set to a predetermined taper angle and the dimension of said second impurity area in the channel direction overlapped with said third shaped gate electrode is set to predetermined dimension.