Method for processing coating film and method for manufacturing semiconductor element with use of the same method
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsYasushi Fujii, Hiroyuki Iida, Isao Sato, Kazumasa Wakiya, Shigeru Yokoi
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Abstract
A method for processing a coating film includes the steps of forming a silica group coating film having a low dielectric constant on a substrate, conducting an etching process to the silica group coating film through a photoresist pattern, and processing the silica group coating film with plasma induced from helium gas. With this, it is possible to prevent the silica group coating film from being damaged when a wet stripping process is conducted to remove the photoresist pattern as a subsequent process, and to maintain the low dielectric constant of the coating film.
Claims18
A method for processing a coating film comprising the steps of:
- forming a silica group coating film having a dielectric constant equal to or less than 2.7 on a substrate;
- conducting an etching process to said silica group coating film through a photoresist pattern;
- processing said silica group coating film, to which said etching process has been conducted, with plasma induced from helium gas;
- and
- conducting a wet stripping process to said photoresist pattern.
A method for manufacturing a semiconductor element comprising the following steps of:
- (1) forming a silica group coating film having a dielectric constant equal to or less than 2.7 on a substrate;
- (2) providing a photoresist pattern on said silica group coating film;
- (3) conducting an etching process to said silica group coating film using said photoresist pattern as a mask;
- (4) processing said silica group coating film with plasma induced from helium gas, subsequent to said etching process;
- and
- (5) conducting a wet stripping process to said photoresist pattern.
Dependencies are inferred from the claim text.