Method of manufacturing a semiconductor device including a heat treatment procedure
AssigneeOki Electric Industry Co., Ltd.
InventorYasuo Tanaka
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes forming copper conductive patterns on an insulating layer formed on a semiconductor base, ashing the whole insulating layer including the copper conductive patterns at a temperature at which no oxide film is formed on the copper conductive patterns, and thereafter baking the whole insulating layer including the copper conductive patterns in an oxidative atmosphere at a temperature range of about 150° C. to about 200° C. After the baking step, an encapsulating resin is formed on the insulating layer including the copper conductive patterns.
Claims20
A method of manufacturing a semiconductor device comprising:
- forming an insulating layer on a semiconductor substrate;
- forming a plurality of copper conductive patterns on the insulating layer;
- ashing the insulating layer and the copper conductive patterns at a predetermined temperature so that the copper conductive patterns are not substantially oxidized;
- baking the ashed insulating layer and the ashed copper conductive patterns in an oxidative atmosphere at a temperature range of about 150° C. to about 200° C.;
- and
- forming an encapsulating resin on the baked insulating layer and the baked copper conductive patterns.
A method of manufacturing a semiconductor device comprising:
- providing a semiconductor substrate having an insulating layer thereon;
- forming a plurality of copper conductive patterns on the insulating layer;
- subjecting the insulating layer and the copper conductive patterns to a first heat treatment so that the copper conductive patterns are not substantially oxidized;
- subjecting the first heat treated insulating layer and the first heat treated copper conductive patterns to a second heat treatment in an oxidative atmosphere at a temperature range of about 150° C. to about 200° C.;
- and
- forming an encapsulating resin on the second heat treated insulating layer and the second heat treated copper conductive patterns.
A method of manufacturing a semiconductor device comprising:
- providing a semiconductor substrate having a plurality of semiconductor elements formed thereon;
- forming a first insulating layer on the semiconductor substrate;
- forming a plurality of copper conductive patterns on the first insulating layer;
- forming a plurality of copper posts on the copper conductive patterns, respectively;
- subjecting the first insulating layer, the copper conductive patterns and the copper posts to a first heat treatment so that the copper conductive patterns and the copper posts are not substantially oxidized;
- subjecting the first heat treated first insulating layer, the first heat treated copper conductive patterns and the first heat treated copper posts to a second heat treatment in an oxidative atmosphere at a temperature range of about 150° C. to about 200° C.;
- and
- forming a second insulating layer on the second heat treated first insulating layer, the second heat treated copper conductive patterns and the second heat treated copper posts so that tops of the second heat treated copper posts are exposed.
Dependencies are inferred from the claim text.