Diffusion barrier layer for semiconductor wafer fabrication
AssigneeMicron Technology, Inc.
InventorsAmmar Derraa, Sujit Sharan, Paul Castrovillo
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Abstract
Diffusion barrier film layers and methods of manufacture and use are provided. The films comprise boron-doped TiCl4-based titanium nitride, and provide an improved diffusion barrier having good adhesive, electrical conductivity, and anti-diffusion properties. The films can be formed on a silicon substrate without an underlying contact layer such as TiSix, an improvement in the fabrication of contacts to shallow junctions and other miniature components of integrated circuits.
Claims78
A method of forming a diffusion barrier layer in a semiconductor device, comprising the step of:
- forming the diffusion barrier layer by depositing titanium boronitride over and in contact with a semiconductive substrate.
A method of forming a diffusion barrier layer in a semiconductor device, comprising the step of:
- forming a diffusion barrier layer over and in contact with a semiconductive substrate by chemical vapor deposition of a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane, the gaseous mixture comprising the diborane in an amount effective to provide the diffusion barrier layer with an amount of boron for adherence to the substrate.
A method of forming a diffusion barrier layer on a conductive area within a semiconductive substrate, the method comprising the step of:
- depositing a titanium boronitride material onto the conductive area to form the diffusion barrier layer.
A method of forming a diffusion barrier layer on a conductive area within a semiconductive substrate, the method comprising the step of:
- depositing a titanium boronitride material onto the conductive area to form the diffusion barrier layer, the conductive area and the diffusion barrier layer defining a contact interface therebetween;
- wherein the diffusion barrier layer comprises an amount of boron effective to adhere to the conductive area, and an amount of nitrogen effective to maintain an effective level of conductivity for electrical contact with the conductive area.
A method of forming a diffusion barrier layer in a semiconductor device comprising the step of:
- depositing a layer comprising titanium boronitride over and in contact with a silicon substrate.
A method of forming a diffusion barrier layer on a semiconductor device, comprising the step of:
- depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane onto a silicon substrate to form the diffusion barrier layer.
A method of forming a diffusion barrier layer in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon substrate, the method comprising the step of:
- depositing titanium boronitride over and in contact with the silicon substrate to form the diffusion barrier layer.
A method of forming a diffusion barrier layer over a substrate, comprising the steps of:
- positioning the substrate within a chemical vapor deposition reactor;
- and
- flowing a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane within the reactor to deposit a layer of titanium boronitride on an outer surface of the substrate, the outer surface comprising a silicon material.
A method of forming a diffusion barrier layer over a substrate relative to a contact opening, comprising the steps of:
- positioning the substrate within a chemical vapor deposition reactor;
- the substrate comprising a semiconductor substrate having a conductively doped diffusion region formed therein, an insulating dielectric layer overlying the diffusion region, and a contact opening formed into the insulating dielectric layer to the substrate diffusion region;
- and
- providing a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane within the reactor to deposit a layer of titanium boronitride within the contact opening over the substrate diffusion region to form the diffusion barrier layer.
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying semiconductive substrate, the method comprising the steps of:
- forming a conductive diffusion barrier layer comprising titanium boronitride over and in contact with the substrate;
- and
- depositing a conductive material onto the diffusion barrier layer to fill the opening.
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying semiconductive substrate, the method comprising the step of:
- depositing a titanium boronitride material onto the semiconductive substrate from a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane to form a conductive diffusion barrier layer;
- and
- depositing a conductive fill material onto the diffusion barrier layer to fill the opening.
A method of forming a contact structure in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the step of:
- flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the substrate to form a diffusion barrier layer over and in contact with the substrate;
- and
- depositing a fill material over the diffusion barrier layer to fill the opening.
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to a conductive area in an underlying silicon-comprising substrate, the method comprising the steps of:
- depositing a conductive diffusion barrier layer comprising titanium boronitride over the substrate within the opening by chemical vapor deposition of a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane;
- and
- filling the opening with a conductive material deposited onto the diffusion barrier layer;
- wherein the gaseous mixture comprises the ammonia and diborane in amounts effective to adhere the diffusion barrier layer to the substrate and the conductive contact, and to provide an effective level of conductivity for electrical contact between the conductive fill material and the conductive area in the substrate.
A method of forming a semiconductor device, comprising the steps of:
- forming an insulative layer over a semiconductive substrate;
- forming an opening in the insulative layer to the substrate;
- forming a conductive diffusion barrier layer comprising titanium boronitride over the substrate;
- the substrate and the diffusion barrier layer defining a contact interface therebetween;
- and
- filling the opening with a fill material;
- whereby the diffusion barrier layer comprises an amount of boron effective to adhere to the substrate and to the fill material.
A method of forming a contact in a semiconductor device, comprising the steps of:
- providing a semiconductive substrate and an overlying insulative layer formed thereon, the insulative layer having an opening formed therein to the substrate;
- forming a diffusion barrier layer comprising titanium boronitride over the substrate within the opening, the substrate and diffusion barrier layer defining a contact interface therebetween;
- and
- depositing a fill material onto the diffusion barrier layer to fill the opening.
A method of forming a semiconductor device, comprising the steps of:
- forming an insulative layer over a silicon-comprising substrate comprising a conductive area;
- forming an opening in the insulative layer to the conductive area of the substrate;
- depositing a diffusion barrier layer comprising titanium boronitride onto the conductive area in the substrate;
- and
- depositing a conductive material onto the diffusion barrier layer to fill the opening;
- whereby the diffusion barrier layer comprises an amount of boron effective to provide an effective level of adhesion of the diffusion barrier layer to the substrate and the conductive fill material;
- and an amount of nitrogen effective to maintain the conductivity of the diffusion barrier layer at a predetermined level for effective electrical contact between the conductive fill material and the conductive area of the substrate.
A method of forming a diffusion barrier layer on a substrate, comprising the step of:
- forming a layer of titanium boronitride over the substrate.
A method of forming a diffusion barrier layer on a substrate, comprising the step of:
- depositing a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane to form the diffusion barrier layer on the substrate.
Dependencies are inferred from the claim text.