Low temperature aluminum planarization process
AssigneeVitesse Semiconductor Corporation
InventorEnde Shan
Life of this patent
Estimating the term…
Abstract
A low temperature aluminum planarization process. Vias, including high aspect ratio vias, are filled using a liner layer, a seed layer, and a fill layer. The device associated with the via is exposed to a reactive gas prior to applying the fill layer to the device.
Claims34
A treatment of a semiconductor device so as to allow substantially completely filled vias, the treatment comprising:
- depositing a metal liner layer comprising titanium nitride on a semiconductor device including an aperture;
- depositing, using physical vapor deposition, a seed layer of aluminum on the metal liner layer with the temperature of the semiconductor device below 300 degrees centigrade;
- exposing the seed layer of aluminum to a reactive gas;
- and
- depositing, using a sputtering technique, aluminum on the seed layer, with the temperature of the semiconductor device greater than 350 degrees centigrade, to fill the aperture, whereby the aperture is substantially filled, creating a via.
A process of fabricating vias and trenches in a semiconductor device, the process comprising:
- applying a metal liner layer comprising titanium nitride to a surface and into an aperture of a semiconductor device;
- applying, using physical vapor deposition, a seed layer of aluminum onto the metal liner layer with the temperature of the semiconductor device being below 300 degrees centigrade;
- treating the seed layer of aluminum with a reactive gas;
- and
- depositing, using a sputtering technique, a layer of aluminum onto the seed layer with the temperature of the semiconductor device being greater than 350 degrees centigrade.
The process of claim wherein 23 wherein the atmosphere contains oxygen mixed with inert gasses.
A process of forming vias and trenches on a semiconductor device that allows for vias and trenches with width of less than about 0.18 μm and with an aspect ratio of greater than about 6:1 to be substantially filled and substantial filling of large vias and trenches comprising depositing, using physical vapor deposition, a seed layer of cold aluminum on a metal liner layer comprising titanium nitride, exposing the seed layer to a reactive gas containing atmosphere, and depositing, using a sputtering technique, hot aluminum on the seed layer.
Dependencies are inferred from the claim text.