Production method for solid imaging device

Abstract

White defects caused by a dark-current of a solid-state imaging device is reduced by effectively bringing out gettering capability of a buried getter sink layer. A buried getter sink layer is formed by introducing to the semiconductor substrate a substance of a second element which is a congener of a first element composing a semiconductor substrate, a crystal growth layer is formed by crystal growing a substance of the first element on a surface of the semiconductor substrate, and a solid-state imaging element is formed inside and on the crystal growth layer at a lower temperature than that in the case of forming an extrinsic getter sink layer by introducing a substance of a third element of a different group from the first element on a back surface of the semiconductor substrate. Alternately, a solid-state imaging element is formed at a lower temperature than that in the case of forming an extrinsic getter sink layer on a surface of the crystal growth layer by oxidization in an atmosphere of a gas containing hydrochloric acid.

Dependencies are inferred from the claim text.