Capacitor for semiconductor memory device and method of manufacturing the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsKee Jeung Lee, Dong Jun Kim
Life of this patent
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Abstract
Disclosed are a capacitor for semiconductor devices capable of increasing storage capacitance and preventing leakage current, and method of manufacturing the same. The capacitor for semiconductor memory devices according to the present invention includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the upper portion of the dielectric layer, wherein the dielectric layer is a crystalline TaxOyNz layer, and the total of x, y, and z in the crystalline TaxOyNz layer is 1, and y is 0.3 to 0.5, and z is 0.1 to 0.3.
Claims4
A capacitor for semiconductor memory devices comprising:
- a lower electrode;
- a dielectric layer formed on the lower electrode;
- and
- an upper electrode formed on the upper portion of the dielectric layer, wherein the dielectric layer is a crystalline TaxOyNz layer, and the total of x, y, and z in the crystalline TaxOyNz layer is 1, and y is 0.3 to 0.5, and Z is 0.1 to 0.3.
A method of manufacturing a capacitor of semiconductor memory devices comprising the steps of:
- providing a semiconductor substrate in which a MOS transistor is formed;
- forming, on the semiconductor substrate, an interlevel insulating layer having a contact hole exposing a selected portion of a junction region of the MOS transistor;
- forming a lower electrode on the interlevel insulating layer to contact with the exposed junction region;
- depositing an amorphous TaxOyNz layer as a dielectric layer on the lower electrode;
- crystallizing the amorphous TaxOyNz layer;
- and
- forming an upper electrode on the crystalline TaxOyNz layer, wherein the total of x, y and z in the TaxOyNz layer is 1, and y is 0.3 to 0.5, and z is 0.1 to 0.3.
Dependencies are inferred from the claim text.