Method for forming a multilayer electrode for a ferroelectric capacitor

A method of forming a capacitor, comprising the steps of:

• providing a substrate;
• forming a platinum-rhodium layer over the substrate;
• forming a platinum layer over the platinum-rhodium layer, said platinum-rhodium layer and platinum layer forming a lower electrode, wherein said platinum layer is formed to a thickness that is approximately from 50 to approximately 300 Angstroms thick;
• forming a dielectric layer of a ferroelectric or high dielectric constant dielectric material over the platinum layer;
• and
• forming an upper electrode over the dielectric layer.

A method of forming a capacitor, comprising the steps of:

• providing a substrate;
• forming a first electrode over the substrate, wherein the first electrode has a titanium layer over the substrate, a platinum-rhodium layer over the titanium layer, and a platinum layer over the platinum-rhodium layer;
• forming a dielectric layer of a ferroelectric or high dielectric constant dielectric material on the first electrode;
• and
• forming a second electrode over the dielectric layer.

A method of forming a capacitor, comprising the steps of:

• providing a substrate;
• forming a platinum-rhodium layer over the substrate;
• forming a platinum layer over the platinum-rhodium layer, said platinum-rhodium layer and platinum layer forming a lower electrode;
• forming a dielectric layer of a ferroelectric or high dielectric constant dielectric material over the platinum layer;
• and
• forming an upper electrode over the dielectric layer, wherein said upper electrode forming step comprises forming a platinum layer over the dielectric layer and forming a platinum-rhodium layer over the platinum layer.