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US 6,746,912 B2Granted
MIM capacitor and manufacturing method therefor
AssigneeMurata Manufacturing Co., Ltd.
InventorHidefumi Nakata
Life of this patent
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Abstract
A downsized, high-capacity MIM capacitor provided on a compound semiconductor includes a lower electrode comprising a plurality of metal layers including a top layer, an upper electrode, and a dielectric layer positioned between the lower electrode and the upper electrode. The entire surface of the top metal layer is oxidized to form an insulating metal oxide layer.
Claims7
A method of manufacturing an MIM capacitor, comprising:
- providing a lower electrode comprising a plurality of metal layers including a top metal layer;
- oxidizing the top metal layer of the lower electrode by heating at a temperature between 200 and 400° C. to form an insulative layer;
- providing a dielectric layer on the insulative oxidized top metal layer;
- and
- providing an upper layer on the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.