Transistor, semiconductor device and manufacturing method of semiconductor device

The method of manufacturing a semiconductor device comprising;

• forming a first dielectric film on a semiconductor substrate;
• depositing a first semiconductor layer on the first dielectric film;
• pattering the first dielectric film and the first semiconductor layer;
• forming second semiconductor layers of first and second conductivity types on a principal surface of the semiconductor substrate;
• forming third semiconductor layers of the first and second conductivity types different in composition from the second semiconductor layers over the second semiconductor layers;
• depositing a second dielectric film on or over the first dielectric film, the first semiconductor layer, the second semiconductor layers and the third semiconductor layers;
• removing the second dielectric film until the upper faces of the first semiconductor layer and the third semiconductor layers appear;
• removing the first semiconductor layer and the third semiconductor layers until faces of the second semiconductor layers appear;
• and
• depositing one of a metal or silicide on upper faces of the second semiconductor layers.

A method of manufacturing a semiconductor device comprising:

• forming a first dielectric film on a semiconductor substrate;
• depositing a first semiconductor layer on the first dielectric film;
• patterning the first dielectric film and the first semiconductor layer;
• forming second semiconductor layers of first and second conductivity types on a principal surface of the semiconductor substrate;
• depositing a second dielectric film on or over the first dielectric film, the first semiconductor layer and the second semiconductor layers;
• removing the second dielectric film until upper faces of the first semiconductor layer and the second semiconductor layers appear;
• oxidizing the first semiconductor layer and the second semiconductor layers while letting at least part of the second semiconductor layers reside;
• removing oxidized portions of the first semiconductor layer and the second semiconductor layers;
• and
• depositing one of a metal or silicide over the second semiconductor layers.

A method of manufacturing a semiconductor device comprising:

• forming a first dielectric film on a semiconductor substrate;
• depositing a first semiconductor layer on the first dielectric film;
• patterning the first dielectric film and the first semiconductor layer;
• forming second semiconductor layers of first and second conductivity types on a principal surface of the semiconductor substrate;
• forming third semiconductor layer of the first and second conductivity types different in composition from the second semiconductor layers over the second semiconductor layers;
• depositing a second dielectric film on or over the first dielectric film, the first semiconductor layer, the second semiconductor layers and the third semiconductor layers;
• removing the second dielectric film until upper faces of the first semiconductor layer and the third semiconductor layers appear;
• oxidizing the first semiconductor layer and the third semiconductor layers;
• removing the first semiconductor layer and the third semiconductor layers until the uppers faces of the second semiconductor layers appear;
• and
• depositing one of a metal or silicide on or over the second semiconductor layers.