Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and a method for fabricating solar cells and active matrix liquid crystal devices

A process for producing an electronic device comprising the steps of:

• forming a crystalline semiconductor film by a process comprising:
• a semiconductor film deposition process in which a semiconductor film is deposited on a substrate,
• a first annealing process in which said semiconductor film is crystallized by repeatedly performing a process that melt crystallizes a portion of said semiconductor film, and
• a second annealing process in which rapid thermal annealing is performed on said crystallized semiconductor film,
• wherein an annealing temperature in the second annealing process is expressed by the absolute temperature T and, when the annealing time is t, expressed in seconds, annealing temperature T and annealing time t satisfy the relationship:
• 1.72×10−21sec<t·exp(−ε/kT)<4.63×10−14sec
• wherein ε=3.01eV and k=8.617×10−5eV/K;
• forming a panel equipped with a device using the semiconductor film;
• and
• installing the panel in a body of an electronic device.