Method to form relaxed sige layer with high ge content

A method of forming a SiGe layer having a relatively high Ge content, comprising:

• preparing a silicon substrate, wherein the silicon substrate is taken from the group of substrates consisting of bulk silicon and SIMOX;
• depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the Ge content of the SiGe layer is equal to or greater than 25%, by molecular weight, and where said depositing is done at a temperature in a range of between about 400° C. and 600° C.;
• implanting H+ ions into the SiGe layer at a dose of between about 1·1016 cm−2 to 5·1016 cm−2, at an energy of between about 20 keV to 45 keV;
• thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an argon atmosphere at a temperature of between about 650° C. to 950° C. for between about 30 seconds and 30 minutes;
• and
• depositing a layer of tensile-strained silicon on the relaxed SiGe layer to a thickness of between about 5 nm to 30 nm.

A method of forming a SiGe layer having a relatively high Ge content, comprising:

• preparing a silicon substrate;
• depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the Ge content of the SiGe layer is equal to or greater than 22%, by molecular weight, and at a temperature in a range of between about 400° C. to 600° C.;
• implanting H+ ions into the SiGe layer at a dose of between about 1·1016 cm−2 to 5·1016 cm−2, at an energy of between about 20 keV to 45 keV;
• thermal annealing the substrate and SiGe layer, to highly relax the SiGe layer to a relaxation of at least 70%, in an inert atmosphere at a temperature of between about 650° C. to 950° C. for between about 30 seconds and 30 minutes;
• and
• depositing a layer of tensile-strained silicon on the relaxed SiGe layer to a thickness of between about 5 nm to 30 nm.