Method for forming a semiconductor device having high-K gate dielectric material
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAi-Sen Liu, Baw-Ching Perng, Ming-Ta Lei, Wen-Kai Wan, Cheng-Chung Lin, Kuei-Wu Huang, Yih-Shung Lin, Chia-Hui Lin
Life of this patent
Estimating the term…
Abstract
In a method of forming an integrated circuit, a sacrificial layer is formed over a substrate. The sacrificial layer has a gate trench formed therein and a first layer of a first material formed over the substrate in the gate trench. A second layer of a second material is formed over the first layer in the gate trench. The first and second layers are processed to form a layer of a high-K dielectric material.
Claims25
A method of forming an integrated circuit, comprising the steps of:
- (a) forming a sacrificial layer over a substrate, said sacrificial layer having a gate trench formed therein and a first layer of a first material formed over said substrate in said gate trench;
- (b) forming a second layer of a second material over said first layer in said gate trench;
- and
- (c) processing said first and second layers to form a layer of a high-K dielectric material.
A method of forming an integrated circuit including a transistor device having a high-K dielectric layer, comprising the following steps:
- forming an oxide layer over a substrate;
- forming a sacrificial layer over said oxide layer;
- forming a gate trench in said sacrificial layer, thereby exposing said oxide layer in said gate trench;
- depositing a metal layer in said gate trench;
- removing said sacrificial layer;
- processing said oxide layer and metal layer to form a high-K dielectric layer;
- and
- completing said transistor device, wherein said high-K dielectric layer forms at least a portion of a gate dielectric of said transistor device.
A method of forming an integrated circuit including a transistor device having a high-K dielectric layer, comprising the following steps:
- forming a sacrificial layer over a substrate;
- forming a gate trench in said sacrificial layer;
- after forming said gate trench, conformally depositing an oxide layer along said sacrificial layer;
- depositing a metal layer in said gate trench over said oxide layer;
- removing said sacrificial layer;
- processing said oxide layer and metal layer to form a high-K dielectric layer;
- and
- completing said transistor device, wherein said high-K dielectric layer forms at least a portion of a gate dielectric of said transistor device.
Dependencies are inferred from the claim text.