Optoelectronic device with improved light extraction
AssigneeEmcore Corporation
InventorsIvan Eliashevich, Hari Venugopalan, Bob Karlicek, Stanton Weaver
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Abstract
An improved method for producing optoelectronic devices such as light emitting diodes or laser diodes is provided. Light emitting diodes or laser diodes are provided with improved light extraction. Epitaxial layers including a light emitting p-n junction are deposited on a substrate, and separations are cut through the epitaxial layers to provide a structure including a plurality of individual dies on the substrate. The structure is mounted on a submount and the substrate is removed. An index matching material is then attached to improve light extraction from the optoelectronic device.
Claims43
A method of manufacturing an optoelectronic device, comprising:
- (a) providing a substrate having first and second major surfaces;
- (b) growing epitaxial layers on the first major surface of the substrate, the epitaxial layers including a first region of a first conductivity type and a second region of a second conductivity type and a light-emitting p-n junction between the first region and the second region;
- (c) forming separations of substantially equal depth through the epitaxial layers to about the first major surface of the substrate to provide a structure including a plurality of individual dies on the first major surface of the substrate;
- (d) mounting the structure to a submount at the first region of the individual dies to expose the second major surface of the substrate;
- and
- (e) removing the substrate from the structure.
A method of manufacturing an optoelectronic device, comprising:
- (a) providing a substrate having first and second major surfaces;
- (b) growing epitaxial layers on the first major surface of the substrate, the epitaxial layers including a first region of a first conductivity type and a second region of a second conductivity type and a light-emitting p-n junction between the first region and the second region;
- (c) forming separations through the epitaxial layers to about the first major surface of the substrate to provide a structure including a plurality of individual dies on the first major surface of the substrate;
- (d) mounting the structure to a submount via an adhesive at the first region of the individual dies to expose the second major surface of the substrate, wherein the submount is comprised of material selected from the group consisting of sapphire, silicon, silicon carbide, ceramics and polyimide;
- (e) removing substrate from the structure;
- and
- (f) attaching an index matching material to the second region of each of the individual dies.
A method of manufacturing an optoelectronic device, comprising:
- (a) providing a substrate having first and second major surfaces;
- (b) growing epitaxial layers on the first major surface of the substrate, the epitaxial layers including a first region of a first conductivity type and a second region of a second conductivity type and a light-emitting p-n junction between the first region and the second region;
- (c) forming separations having a width in the range of about 20 microns to 30 microns through the epitaxial layers to about the first major surface of the substrate to provide a structure including a plurality of individual dies on the first major surface of the substrate;
- (d) mounting the structure to a submount at the first region of the individual dies via solder bonding pads of the submount to expose the second major surface of the substrate;
- (e) removing the substrate from the structure using a laser to delaminate the substrate from the structure;
- (f) dispensing epoxy lenses containing phosphor onto the second region of the individual die;
- and
- (g) cleaving the submount to form individual die-submount assemblies.
Dependencies are inferred from the claim text.