Semiconductor device and method of manufacturing the same

A manufacturing method of a semiconductor device comprising the steps of:

• forming an insulating film over a semiconductor substrate;
• forming sequentially a first conductive film, a dielectric film, and a second conductive film over the insulating film;
• forming a first film made of one of metal and metal compound on the second conductive film;
• forming a second film made of insulating material on the first film;
• forming a hard mask by patterning the second film and the first film into a capacitor planar shape;
• forming a capacitor upper electrode by etching the second conductive film in a region that is not covered with the hard mask;
• forming a capacitor dielectric film by etching the dielectric film in the region that is not covered with the hard mask;
• etching the first conductive film in the region that is not covered with the hard mask up to a depth that does not expose the insulating film;
• removing the second film of the hard mask by etching;
• forming a capacitor lower electrode by etching a remaining portion of the first conductive film in the region, that is not covered with the hard mask, to the end;
• and
• removing the first film of the hard mask by the etching.