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US 6,746,877 B1Granted
Encapsulation of ferroelectric capacitors
AssigneeInfineon AG
InventorsKarl Hornik, Ulrich Egger, Rainer Bruchhaus
Life of this patent
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Abstract
A ferroelectric capacitor encapsulation method for preventing hydrogen damage to electrodes and ferroelectric material of the capacitor. In general terms, the method for encapsulating a capacitor includes etching a bottom electrode of a capacitor to expose an underlying wafer surface. An undercut is etched between the capacitor and the wafer surface. The undercut is refilled with a barrier layer to reduce the diffusion of hydrogen from the surface of the wafer into the capacitor.
Claims16
A method for encapsulating a capacitor comprising:
- etching a bottom electrode of a capacitor to expose an underlying wafer surface;
- etching an undercut between the capacitor and the wafer surface;
- and
- refilling the undercut with a barrier layer to reduce the diffusion of contaminants from the surface of the wafer into the capacitor.
1 more element
Dependencies are inferred from the claim text.