Process for structuring a photoresist layer

A process of structuring a photoresist layer, which comprises:

• a) providing a substrate on which a photoresist layer has been applied at least in some areas, the photoresist layer including:
• a film-forming polymer containing molecular groups convertible into alkali-soluble groups by acid-catalyzed elimination reactions;
• a photobase generator releasing a base on exposure to light in a defined wavelength range;
• and
• benzylthiolanium hexafluoro-propanesulfonate releasing an acid when the benzylthiolanium hexafluoro-propanesulfonate is raised above a given temperature;
• b) exposing areas of the photoresist layer to light in the defined wavelength range;
• c) heating the photoresist layer above the given temperature:
• to release the acid from the benzylthiolanium hexafluoro-propanesulfonate;
• and
• to effect the acid-catalyzed elimination reaction;
• and
• d) developing the photoresist layer.

A method of structuring a photoresist layer, which comprises:

• a) providing a substrate on which a photoresist layer has been applied at least in some areas, the photoresist layer including:
• a film-forming polymer containing molecular groups convertible into alkali-soluble groups by acid-catalyzed elimination reactions;
• a photobase generator releasing a base on exposure to light in a defined wavelength range;
• and
• a thermoacid generator releasing an acid when the thermoacid generator is raised above a given temperature;
• b) exposing areas of the photoresist layer to light in the defined wavelength range;
• c) heating the photoresist layer above the given temperature:
• to release the acid from the thermoacid generator;
• and
• to effect the acid-catalyzed elimination reaction;
• and
• d) developing the photoresist layer;
• the molecular groups being one of:
• groups having a structure according to the formula;
• where R1 is selected from the group consisting of tert-alkyl tert-butyl, tetrahydro-furanyl, tetrahydropyranyl tert-butoxycarbonyl-oxy, and acetal groups;
• and
• groups having a structure according to at least one of the formulas:
• where:
• R1, R2, and R3 independently of one another are selected from the group consisting of methyl, ethyl, propyl, and butyl;
• R4, R5, and R6 independently of one another are selected from the group consisting of hydrogen, methyl, ethyl, propyl, and butyl;
• only one of R4 and R5 is hydrogen;
• and
• R6 is not hydrogen.

A method of structuring a photoresist layer, which comprises:

• a) providing a substrate on which a photoresist layer has been applied at least in some areas, the photoresist layer including:
• a film-forming polymer containing molecular groups convertible into alkali-soluble groups by acid-catalyzed elimination reactions;
• a photobase generator releasing a bass on exposure to light in a defined wavelength range;
• and
• a thermoacid generator releasing an acid when the thermoacid generator is raised above a given temperature;
• b) exposing areas of the photoresist layer to light in the defined wavelength range;
• c) heating the photoresist layer above the given temperature:
• to release the acid from the thermoacid generator;
• and
• to effect the acid-catalyzed elimination reaction;
• and
• d) developing the photoresist layer with a solution of 2.38% by weight of tetramethylammonium hydroxide in water.