Use of surface coupling agent to improve adhesion
AssigneeAdvanced Micro Devices, Inc.
InventorsBharath Rangarajan, Michael K. Templeton, Bhanwar Singh
Life of this patent
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Abstract
Disclosed are methods of processing a semiconductor structure, involving the steps of depositing a light-degradable surface coupling agent on a semiconductor substrate; depositing a resist over the light-degradable surface coupling agent; irradiating portions of the resist, wherein the light-degradable surface coupling agent under the irradiated portions of the resist at least partially decomposes; and developing the resist.
Claims22
A method of processing a semiconductor structure, comprising:
- depositing a light-degradable surface coupling agent on a semiconductor substrate, the light-degradable surface coupling agent losing its adhesion properties upon exposure to light;
- depositing a resist over the light-degradable surface coupling agent;
- irradiating portions of the resist, wherein the light-degradable surface coupling agent under the irradiated portions of the resist at least partially decomposes;
- and
- developing the resist.
A method of increasing adhesion between non-irradiated portions of a resist and a semiconductor substrate while improving removal of irradiated portions of the resist from the semiconductor substrate during development, comprising:
- employing a light-degradable surface coupling agent having a thickness from about 10 Å to about 1,000 Å between the resist and the semiconductor substrate, the light-degradable surface coupling agent losing its adhesion properties upon exposure to light.
A method of processing a semiconductor structure, comprising:
- depositing a light-degradable surface coupling agent on a semiconductor substrate, the light-degradable surface coupling agent having a polar surface and a non-polar surface, the light-degradable surface coupling agent losing its adhesion properties upon exposure to light;
- depositing a resist over the light-degradable surface coupling agent;
- irradiating portions of the resist, wherein the light-degradable surface coupling agent under the irradiated portions of the resist at least partially decomposes;
- and
- developing the resist.
A method of increasing adhesion between non-irradiated portions of a resist and a semiconductor substrate while improving removal of irradiated portions of the resist from the semiconductor substrate during development, comprising:
- employing a light-degradable surface coupling agent having a thickness from about 10 Å to about 1,000 Å between the resist and the semiconductor substrate, the light-degradable surface coupling agent having a polar surface and a non-polar surface, the light-degradable surface coupling agent losing its adhesion properties upon exposure to light.
Dependencies are inferred from the claim text.